Nano-patterned AlGaInP light-emitting diode based on UV-kiss metal transfer technology

Yi Ta Hsieh, Chun Hung Chen, Yung-Chun Lee, Xu Feng Zeng, Shih Chang Shei, Hung Yi Lin

研究成果: Conference contribution

1 引文 (Scopus)

摘要

This paper describes a new nano-patterning technique, the UV-Kiss Metal Transfer (UV-KMT) method, and applies it for patterning micro/nano-structures on AlGaInP light-emitting diodes (LEDs) for enhancing their light extraction efficiency. First of all, an ETFE mold with micro/nano-features is replicated from a silicon master mold. A thin metal film is then deposited on the ETFE mold which has very low surface energy. A layer of UV curable polymer solution is spin-coated on an AlGaInP LED surface. The metal-film coated EFTE mold and the UV-polymer coated LED are brought into contact with a uniformly distributed pressure of 0.1 MPa, and UV light is radiated through the ETFE mold and solidifies the UV polymer. The solidified UV polymer has stronger adhesion to the metal film in contact with, and therefore can transfer the metal pattern defined by the convex surface feature of the ETFE mold onto the AlGaInP LED surface. The transferred metal pattern is then serving as an etching mask for RIE etching on the underlying UV polymer layer. Finally, a patterned structure consisting of a metal film on top and an underlying UV polymer layer is formed on the LED surface. This metal/polymer surface structure can well serve as an etching mask again for ICP etching on the LED, and hence complete the fabrication of micro/nano-structures on the top surfaces of AlGaInP LEDs for enhancing their light extraction efficiency. The optical power measurement using an integrating sphere shows that the extraction efficiency of the patterned LED is 25% higher than that of the conventional LED. In short, we demonstrate an easily implemented, cost effective, and powerful method to pattern LED substrate.

原文English
主出版物標題2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
頁面915-918
頁數4
DOIs
出版狀態Published - 2010 十一月 29
事件5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 - Xiamen, China
持續時間: 2010 一月 202010 一月 23

出版系列

名字2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

Other

Other5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
國家China
城市Xiamen
期間10-01-2010-01-23

指紋

Technology transfer
Light emitting diodes
Metals
Etching
Polymers
Masks
Reactive ion etching
Polymer solutions
Interfacial energy
Surface structure
Ultraviolet radiation
Adhesion
Fabrication
Silicon

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

引用此文

Hsieh, Y. T., Chen, C. H., Lee, Y-C., Zeng, X. F., Shei, S. C., & Lin, H. Y. (2010). Nano-patterned AlGaInP light-emitting diode based on UV-kiss metal transfer technology. 於 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 (頁 915-918). [5592117] (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010). https://doi.org/10.1109/NEMS.2010.5592117
Hsieh, Yi Ta ; Chen, Chun Hung ; Lee, Yung-Chun ; Zeng, Xu Feng ; Shei, Shih Chang ; Lin, Hung Yi. / Nano-patterned AlGaInP light-emitting diode based on UV-kiss metal transfer technology. 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. 頁 915-918 (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010).
@inproceedings{54e35f65b5154771a2379dfd6823dbff,
title = "Nano-patterned AlGaInP light-emitting diode based on UV-kiss metal transfer technology",
abstract = "This paper describes a new nano-patterning technique, the UV-Kiss Metal Transfer (UV-KMT) method, and applies it for patterning micro/nano-structures on AlGaInP light-emitting diodes (LEDs) for enhancing their light extraction efficiency. First of all, an ETFE mold with micro/nano-features is replicated from a silicon master mold. A thin metal film is then deposited on the ETFE mold which has very low surface energy. A layer of UV curable polymer solution is spin-coated on an AlGaInP LED surface. The metal-film coated EFTE mold and the UV-polymer coated LED are brought into contact with a uniformly distributed pressure of 0.1 MPa, and UV light is radiated through the ETFE mold and solidifies the UV polymer. The solidified UV polymer has stronger adhesion to the metal film in contact with, and therefore can transfer the metal pattern defined by the convex surface feature of the ETFE mold onto the AlGaInP LED surface. The transferred metal pattern is then serving as an etching mask for RIE etching on the underlying UV polymer layer. Finally, a patterned structure consisting of a metal film on top and an underlying UV polymer layer is formed on the LED surface. This metal/polymer surface structure can well serve as an etching mask again for ICP etching on the LED, and hence complete the fabrication of micro/nano-structures on the top surfaces of AlGaInP LEDs for enhancing their light extraction efficiency. The optical power measurement using an integrating sphere shows that the extraction efficiency of the patterned LED is 25{\%} higher than that of the conventional LED. In short, we demonstrate an easily implemented, cost effective, and powerful method to pattern LED substrate.",
author = "Hsieh, {Yi Ta} and Chen, {Chun Hung} and Yung-Chun Lee and Zeng, {Xu Feng} and Shei, {Shih Chang} and Lin, {Hung Yi}",
year = "2010",
month = "11",
day = "29",
doi = "10.1109/NEMS.2010.5592117",
language = "English",
isbn = "9781424465439",
series = "2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010",
pages = "915--918",
booktitle = "2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010",

}

Hsieh, YT, Chen, CH, Lee, Y-C, Zeng, XF, Shei, SC & Lin, HY 2010, Nano-patterned AlGaInP light-emitting diode based on UV-kiss metal transfer technology. 於 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010., 5592117, 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, 頁 915-918, 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, Xiamen, China, 10-01-20. https://doi.org/10.1109/NEMS.2010.5592117

Nano-patterned AlGaInP light-emitting diode based on UV-kiss metal transfer technology. / Hsieh, Yi Ta; Chen, Chun Hung; Lee, Yung-Chun; Zeng, Xu Feng; Shei, Shih Chang; Lin, Hung Yi.

2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. p. 915-918 5592117 (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010).

研究成果: Conference contribution

TY - GEN

T1 - Nano-patterned AlGaInP light-emitting diode based on UV-kiss metal transfer technology

AU - Hsieh, Yi Ta

AU - Chen, Chun Hung

AU - Lee, Yung-Chun

AU - Zeng, Xu Feng

AU - Shei, Shih Chang

AU - Lin, Hung Yi

PY - 2010/11/29

Y1 - 2010/11/29

N2 - This paper describes a new nano-patterning technique, the UV-Kiss Metal Transfer (UV-KMT) method, and applies it for patterning micro/nano-structures on AlGaInP light-emitting diodes (LEDs) for enhancing their light extraction efficiency. First of all, an ETFE mold with micro/nano-features is replicated from a silicon master mold. A thin metal film is then deposited on the ETFE mold which has very low surface energy. A layer of UV curable polymer solution is spin-coated on an AlGaInP LED surface. The metal-film coated EFTE mold and the UV-polymer coated LED are brought into contact with a uniformly distributed pressure of 0.1 MPa, and UV light is radiated through the ETFE mold and solidifies the UV polymer. The solidified UV polymer has stronger adhesion to the metal film in contact with, and therefore can transfer the metal pattern defined by the convex surface feature of the ETFE mold onto the AlGaInP LED surface. The transferred metal pattern is then serving as an etching mask for RIE etching on the underlying UV polymer layer. Finally, a patterned structure consisting of a metal film on top and an underlying UV polymer layer is formed on the LED surface. This metal/polymer surface structure can well serve as an etching mask again for ICP etching on the LED, and hence complete the fabrication of micro/nano-structures on the top surfaces of AlGaInP LEDs for enhancing their light extraction efficiency. The optical power measurement using an integrating sphere shows that the extraction efficiency of the patterned LED is 25% higher than that of the conventional LED. In short, we demonstrate an easily implemented, cost effective, and powerful method to pattern LED substrate.

AB - This paper describes a new nano-patterning technique, the UV-Kiss Metal Transfer (UV-KMT) method, and applies it for patterning micro/nano-structures on AlGaInP light-emitting diodes (LEDs) for enhancing their light extraction efficiency. First of all, an ETFE mold with micro/nano-features is replicated from a silicon master mold. A thin metal film is then deposited on the ETFE mold which has very low surface energy. A layer of UV curable polymer solution is spin-coated on an AlGaInP LED surface. The metal-film coated EFTE mold and the UV-polymer coated LED are brought into contact with a uniformly distributed pressure of 0.1 MPa, and UV light is radiated through the ETFE mold and solidifies the UV polymer. The solidified UV polymer has stronger adhesion to the metal film in contact with, and therefore can transfer the metal pattern defined by the convex surface feature of the ETFE mold onto the AlGaInP LED surface. The transferred metal pattern is then serving as an etching mask for RIE etching on the underlying UV polymer layer. Finally, a patterned structure consisting of a metal film on top and an underlying UV polymer layer is formed on the LED surface. This metal/polymer surface structure can well serve as an etching mask again for ICP etching on the LED, and hence complete the fabrication of micro/nano-structures on the top surfaces of AlGaInP LEDs for enhancing their light extraction efficiency. The optical power measurement using an integrating sphere shows that the extraction efficiency of the patterned LED is 25% higher than that of the conventional LED. In short, we demonstrate an easily implemented, cost effective, and powerful method to pattern LED substrate.

UR - http://www.scopus.com/inward/record.url?scp=78649306772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649306772&partnerID=8YFLogxK

U2 - 10.1109/NEMS.2010.5592117

DO - 10.1109/NEMS.2010.5592117

M3 - Conference contribution

AN - SCOPUS:78649306772

SN - 9781424465439

T3 - 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

SP - 915

EP - 918

BT - 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

ER -

Hsieh YT, Chen CH, Lee Y-C, Zeng XF, Shei SC, Lin HY. Nano-patterned AlGaInP light-emitting diode based on UV-kiss metal transfer technology. 於 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. p. 915-918. 5592117. (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010). https://doi.org/10.1109/NEMS.2010.5592117