In this work, the mechanical properties of PECVD silicon nitride deposited on silicon substrates by two different processing conditions were investigated. Indentation method was primary used for qualitatively examining the effect of process conditions to the achieved mechanical properties. The experimental results indicated that the residual stress, fracture toughness and interfacial strength, as well as the fatigue crack propagation were strongly depended on the processing conditions such as deposition temperatures and chamber pressures. Preliminary results indicated that the specimen deposited at a lower temperature and a lower pressure exhibited a much less residual tensile stress and a better interface strength. On the other hand, it was found that RTA could enhance the interfacial strength but the generated high tensile strength could actually reduce the equivalent toughness and leads to structural reliability concerns. In summary, the characterization results should be possible to provide useful information for correlating the mechanical reliability with the processing parameters for future structural design optimization and for improving the structural integrity of PECVD silicon nitride films for MEMS and IC fabrication.