Nanometer scale patterning of silicon (100) surfaces by an atomic force microscope operating in air

Liming Tsau, Dawen Wang, K. L. Wang

研究成果: Article同行評審

59 引文 斯高帕斯(Scopus)

摘要

Modification on silicon (100) surfaces was demonstrated by using an atomic force microscope operating in air. Field-enhanced oxidation on silicon surfaces with protection oxide was done locally by biasing a p-type heavily doped silicon tip between -3 and -10 V. Oxide lines of width as small as ∼10 nm were achieved. After a dip in aqueous HF solution, the oxide was etched away; the modification depth, ∼1 nm, was characterized by the same atomic force microscope. Other field induced reactions for patterning are possible.

原文English
頁(從 - 到)2133-2135
頁數3
期刊Applied Physics Letters
64
發行號16
DOIs
出版狀態Published - 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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