Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on an AlN nanorod-array template

Chen Hung Tsai, Mu Hsin Ma, Yu Feng Yin, Hsiang Wei Li, Wei Chih Lai, Jianjang Huang

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Despite the rapid progress of GaN light-emitting diodes, the quest for better epistructure quality with less defects and relaxed strains to achieve higher internal quantum efficiency has been a popular topic. Here, we propose an AlN nanorod template grown on the sapphire substrate using vapor-liquid-solid method. The corresponding material quality, including voids near nanorods, Raman spectra, and transmission electron microscopy images, indicates significant improvement.

原文English
文章編號7066933
期刊IEEE Journal of Quantum Electronics
51
發行號5
DOIs
出版狀態Published - 2015 五月 1

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

指紋

深入研究「Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on an AlN nanorod-array template」主題。共同形成了獨特的指紋。

引用此