Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on an AlN nanorod-array template

Chen Hung Tsai, Mu Hsin Ma, Yu Feng Yin, Hsiang Wei Li, Wei-Chi Lai, Jianjang Huang

研究成果: Article

3 引文 (Scopus)

摘要

Despite the rapid progress of GaN light-emitting diodes, the quest for better epistructure quality with less defects and relaxed strains to achieve higher internal quantum efficiency has been a popular topic. Here, we propose an AlN nanorod template grown on the sapphire substrate using vapor-liquid-solid method. The corresponding material quality, including voids near nanorods, Raman spectra, and transmission electron microscopy images, indicates significant improvement.

原文English
文章編號7066933
期刊IEEE Journal of Quantum Electronics
51
發行號5
DOIs
出版狀態Published - 2015 五月 1

指紋

Nanorods
nanorods
Light emitting diodes
light emitting diodes
templates
Quantum efficiency
Sapphire
Raman scattering
quantum efficiency
voids
sapphire
Vapors
vapors
Raman spectra
Transmission electron microscopy
Defects
transmission electron microscopy
defects
Liquids
Substrates

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

Tsai, Chen Hung ; Ma, Mu Hsin ; Yin, Yu Feng ; Li, Hsiang Wei ; Lai, Wei-Chi ; Huang, Jianjang. / Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on an AlN nanorod-array template. 於: IEEE Journal of Quantum Electronics. 2015 ; 卷 51, 編號 5.
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Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on an AlN nanorod-array template. / Tsai, Chen Hung; Ma, Mu Hsin; Yin, Yu Feng; Li, Hsiang Wei; Lai, Wei-Chi; Huang, Jianjang.

於: IEEE Journal of Quantum Electronics, 卷 51, 編號 5, 7066933, 01.05.2015.

研究成果: Article

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