Nanostructural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching

Zhan Shuo Hu, Fei Yi Hung, Shoou Jinn Chang, Bohr Ran Huang, Bo Cheng Lin, Kuan Jen Chen, Wen I. Hsu

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

GaN nanotips array was fabricated by an iodine-assist enhanced focused ions beam etching (IFIBE) via the double masks silver oxide (AgO) and gallium oxide (GaO). The function of AgO is used to protect from the elimination of GaO so as to remain GaO on GaN nanotip. The different size of silver cluster was able to assist the formation of GaN nanotips through the double mask process (AgO and GaO). After IFIBE process, the silver mask disappeared and only gallium oxide with a polycrystalline structure was left on top. Oxide-capping GaN nanotips were able to improve the field emission properties (turn-on field was 2.2 V/μm) due to the lower work function of GaN resulted from the distribution of electron existed the interface between GaN and GaO.

原文English
頁(從 - 到)2360-2363
頁數4
期刊Journal of Alloys and Compounds
509
發行號5
DOIs
出版狀態Published - 2011 二月 3

All Science Journal Classification (ASJC) codes

  • 材料力學
  • 機械工業
  • 金屬和合金
  • 材料化學

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