Nanostructural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching

Zhan Shuo Hu; Fei Yi Hung; Shoou Jinn Chang; Bohr Ran Huang; Bo Cheng Lin; Kuan Jen Chen; Wen I. Hsu

doi:10.1016/j.jallcom.2010.11.018

Nanostructural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching

Zhan Shuo Hu, Fei Yi Hung, Shoou Jinn Chang, Bohr Ran Huang, Bo Cheng Lin, Kuan Jen Chen, Wen I. Hsu

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

GaN nanotips array was fabricated by an iodine-assist enhanced focused ions beam etching (IFIBE) via the double masks silver oxide (AgO) and gallium oxide (GaO). The function of AgO is used to protect from the elimination of GaO so as to remain GaO on GaN nanotip. The different size of silver cluster was able to assist the formation of GaN nanotips through the double mask process (AgO and GaO). After IFIBE process, the silver mask disappeared and only gallium oxide with a polycrystalline structure was left on top. Oxide-capping GaN nanotips were able to improve the field emission properties (turn-on field was 2.2 V/μm) due to the lower work function of GaN resulted from the distribution of electron existed the interface between GaN and GaO.

原文	English
頁（從 - 到）	2360-2363
頁數	4
期刊	Journal of Alloys and Compounds
卷	509
發行號	5
DOIs	https://doi.org/10.1016/j.jallcom.2010.11.018
出版狀態	Published - 2011 2月 3

All Science Journal Classification (ASJC) codes

材料力學
機械工業
金屬和合金
材料化學

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10.1016/j.jallcom.2010.11.018

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title = "Nanostructural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching",

abstract = "GaN nanotips array was fabricated by an iodine-assist enhanced focused ions beam etching (IFIBE) via the double masks silver oxide (AgO) and gallium oxide (GaO). The function of AgO is used to protect from the elimination of GaO so as to remain GaO on GaN nanotip. The different size of silver cluster was able to assist the formation of GaN nanotips through the double mask process (AgO and GaO). After IFIBE process, the silver mask disappeared and only gallium oxide with a polycrystalline structure was left on top. Oxide-capping GaN nanotips were able to improve the field emission properties (turn-on field was 2.2 V/μm) due to the lower work function of GaN resulted from the distribution of electron existed the interface between GaN and GaO.",

author = "Hu, {Zhan Shuo} and Hung, {Fei Yi} and Chang, {Shoou Jinn} and Huang, {Bohr Ran} and Lin, {Bo Cheng} and Chen, {Kuan Jen} and Hsu, {Wen I.}",

note = "Funding Information: The authors are grateful to National Cheng Kung University , the Center for Micro/Nano Science and Technology (D99-2700) and NSC 99-2622-E-006-132 for the financial support.",

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doi = "10.1016/j.jallcom.2010.11.018",

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T1 - Nanostructural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching

AU - Hu, Zhan Shuo

AU - Hung, Fei Yi

AU - Chang, Shoou Jinn

AU - Huang, Bohr Ran

AU - Lin, Bo Cheng

AU - Chen, Kuan Jen

AU - Hsu, Wen I.

N1 - Funding Information: The authors are grateful to National Cheng Kung University , the Center for Micro/Nano Science and Technology (D99-2700) and NSC 99-2622-E-006-132 for the financial support.

PY - 2011/2/3

Y1 - 2011/2/3

N2 - GaN nanotips array was fabricated by an iodine-assist enhanced focused ions beam etching (IFIBE) via the double masks silver oxide (AgO) and gallium oxide (GaO). The function of AgO is used to protect from the elimination of GaO so as to remain GaO on GaN nanotip. The different size of silver cluster was able to assist the formation of GaN nanotips through the double mask process (AgO and GaO). After IFIBE process, the silver mask disappeared and only gallium oxide with a polycrystalline structure was left on top. Oxide-capping GaN nanotips were able to improve the field emission properties (turn-on field was 2.2 V/μm) due to the lower work function of GaN resulted from the distribution of electron existed the interface between GaN and GaO.

AB - GaN nanotips array was fabricated by an iodine-assist enhanced focused ions beam etching (IFIBE) via the double masks silver oxide (AgO) and gallium oxide (GaO). The function of AgO is used to protect from the elimination of GaO so as to remain GaO on GaN nanotip. The different size of silver cluster was able to assist the formation of GaN nanotips through the double mask process (AgO and GaO). After IFIBE process, the silver mask disappeared and only gallium oxide with a polycrystalline structure was left on top. Oxide-capping GaN nanotips were able to improve the field emission properties (turn-on field was 2.2 V/μm) due to the lower work function of GaN resulted from the distribution of electron existed the interface between GaN and GaO.

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JF - Journal of Alloys and Compounds

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Nanostructural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching

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