TY - JOUR
T1 - Nanostructured EGFET pH sensors with surface-passivated ZnO thin-film and nanorod array
AU - Chiu, Ying Shuo
AU - Tseng, Chun Yen
AU - Lee, Ching Ting
N1 - Funding Information:
Manuscript received June 10, 2011; accepted July 12, 2011. Date of publication July 18, 2011; date of current version April 06, 2012. This work was supported by the National Science Council, Taiwan, Republic of China under NSC-99-2221-E-006-208-MY3 and NSC-100-3113-E-492-001. The associate editor coordinating the review of this paper and approving it for publication was Prof. Bernhard Jakoby.
PY - 2012
Y1 - 2012
N2 - The sensing membrane of extended-gate field-effect-transistor (EGFET) pH sensors, intrinsic zinc oxide (i-ZnO) thin-film and nanorod array, was fabricated using the vapor cooling condensation method together with anodic alumina membrane (AAM) template. Furthermore, the photoelectrochemical (PEC) method was employed to passivate the ZnO thin-film and the sidewall surface of ZnO nanorod array in order to suppress the influence of Femi level pinning. The resulting EGFET pH sensors with passivated i-ZnO thin-film and i-ZnO nanorod array exhibited significantly improved sensing performances owing to the lower surface state density and the larger sensing surface-to-volume ratio. The measured sensitivities of the pH sensors with unpassivated i-ZnO thin-film and unpassivated i-ZnO nanorod array are 38.46 mV/pH and 44.01 mV/pH, respectively, at the pH value ranging from 4 to 12. The higher sensitivity of 42.37 mV/pH and 49.35 mV/pH, respectively, were measured with the pH sensors with passivated i-ZnO thin-film and passivated i-ZnO nanorod array.
AB - The sensing membrane of extended-gate field-effect-transistor (EGFET) pH sensors, intrinsic zinc oxide (i-ZnO) thin-film and nanorod array, was fabricated using the vapor cooling condensation method together with anodic alumina membrane (AAM) template. Furthermore, the photoelectrochemical (PEC) method was employed to passivate the ZnO thin-film and the sidewall surface of ZnO nanorod array in order to suppress the influence of Femi level pinning. The resulting EGFET pH sensors with passivated i-ZnO thin-film and i-ZnO nanorod array exhibited significantly improved sensing performances owing to the lower surface state density and the larger sensing surface-to-volume ratio. The measured sensitivities of the pH sensors with unpassivated i-ZnO thin-film and unpassivated i-ZnO nanorod array are 38.46 mV/pH and 44.01 mV/pH, respectively, at the pH value ranging from 4 to 12. The higher sensitivity of 42.37 mV/pH and 49.35 mV/pH, respectively, were measured with the pH sensors with passivated i-ZnO thin-film and passivated i-ZnO nanorod array.
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U2 - 10.1109/JSEN.2011.2162317
DO - 10.1109/JSEN.2011.2162317
M3 - Article
AN - SCOPUS:84859804985
SN - 1530-437X
VL - 12
SP - 930
EP - 934
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 5
M1 - 5955064
ER -