Narrow fin width effect of HKMG bulk FinFET devices

Chien Hung Chen, Yiming Li, Yu Yu Chen, Chieh Yang Chen, Sheng Chia Hsu, Wen Tsung Huang, Chin Min Yang, Li Wen Chen, Sheng-Yuan Chu

研究成果: Conference contribution

摘要

In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

原文English
主出版物標題Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
頁面147-150
頁數4
出版狀態Published - 2013 八月 9
事件Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
持續時間: 2013 五月 122013 五月 16

出版系列

名字Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
1

Other

OtherNanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
國家United States
城市Washington, DC
期間13-05-1213-05-16

指紋

Silicon
Static Electricity
Equipment and Supplies

All Science Journal Classification (ASJC) codes

  • Biotechnology

引用此文

Chen, C. H., Li, Y., Chen, Y. Y., Chen, C. Y., Hsu, S. C., Huang, W. T., ... Chu, S-Y. (2013). Narrow fin width effect of HKMG bulk FinFET devices. 於 Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 (頁 147-150). (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; 卷 1).
Chen, Chien Hung ; Li, Yiming ; Chen, Yu Yu ; Chen, Chieh Yang ; Hsu, Sheng Chia ; Huang, Wen Tsung ; Yang, Chin Min ; Chen, Li Wen ; Chu, Sheng-Yuan. / Narrow fin width effect of HKMG bulk FinFET devices. Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. 2013. 頁 147-150 (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013).
@inproceedings{535e0ef68fa94d67adf2a510556ebd30,
title = "Narrow fin width effect of HKMG bulk FinFET devices",
abstract = "In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.",
author = "Chen, {Chien Hung} and Yiming Li and Chen, {Yu Yu} and Chen, {Chieh Yang} and Hsu, {Sheng Chia} and Huang, {Wen Tsung} and Yang, {Chin Min} and Chen, {Li Wen} and Sheng-Yuan Chu",
year = "2013",
month = "8",
day = "9",
language = "English",
isbn = "9781482205817",
series = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",
pages = "147--150",
booktitle = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",

}

Chen, CH, Li, Y, Chen, YY, Chen, CY, Hsu, SC, Huang, WT, Yang, CM, Chen, LW & Chu, S-Y 2013, Narrow fin width effect of HKMG bulk FinFET devices. 於 Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, 卷 1, 頁 147-150, Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, Washington, DC, United States, 13-05-12.

Narrow fin width effect of HKMG bulk FinFET devices. / Chen, Chien Hung; Li, Yiming; Chen, Yu Yu; Chen, Chieh Yang; Hsu, Sheng Chia; Huang, Wen Tsung; Yang, Chin Min; Chen, Li Wen; Chu, Sheng-Yuan.

Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. 2013. p. 147-150 (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; 卷 1).

研究成果: Conference contribution

TY - GEN

T1 - Narrow fin width effect of HKMG bulk FinFET devices

AU - Chen, Chien Hung

AU - Li, Yiming

AU - Chen, Yu Yu

AU - Chen, Chieh Yang

AU - Hsu, Sheng Chia

AU - Huang, Wen Tsung

AU - Yang, Chin Min

AU - Chen, Li Wen

AU - Chu, Sheng-Yuan

PY - 2013/8/9

Y1 - 2013/8/9

N2 - In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

AB - In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

UR - http://www.scopus.com/inward/record.url?scp=84881106898&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84881106898&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84881106898

SN - 9781482205817

T3 - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013

SP - 147

EP - 150

BT - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013

ER -

Chen CH, Li Y, Chen YY, Chen CY, Hsu SC, Huang WT 等. Narrow fin width effect of HKMG bulk FinFET devices. 於 Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. 2013. p. 147-150. (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013).