Narrow fin width effect of HKMG bulk FinFET devices

Chien Hung Chen, Yiming Li, Yu Yu Chen, Chieh Yang Chen, Sheng Chia Hsu, Wen Tsung Huang, Chin Min Yang, Li Wen Chen, Sheng-Yuan Chu

研究成果: Conference contribution

摘要

In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

原文English
主出版物標題Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
頁面147-150
頁數4
出版狀態Published - 2013 八月 9
事件Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
持續時間: 2013 五月 122013 五月 16

出版系列

名字Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
1

Other

OtherNanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
國家United States
城市Washington, DC
期間13-05-1213-05-16

All Science Journal Classification (ASJC) codes

  • Biotechnology

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