Narrow fin width effect of HKMG bulk FinFET devices

Chien Hung Chen; Yiming Li; Yu Yu Chen; Chieh Yang Chen; Sheng Chia Hsu; Wen Tsung Huang; Chin Min Yang; Li Wen Chen; Sheng-Yuan Chu

Narrow fin width effect of HKMG bulk FinFET devices

Chien Hung Chen, Yiming Li, Yu Yu Chen, Chieh Yang Chen, Sheng Chia Hsu, Wen Tsung Huang, Chin Min Yang, Li Wen Chen, Sheng-Yuan Chu

研究成果: Conference contribution

摘要

In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

原文	English
主出版物標題	Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
頁面	147-150
頁數	4
出版狀態	Published - 2013 8月 9
事件	Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States 持續時間: 2013 5月 12 → 2013 5月 16

出版系列

名字	Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
卷	1

Other

Other	Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
國家/地區	United States
城市	Washington, DC
期間	13-05-12 → 13-05-16

All Science Journal Classification (ASJC) codes

生物技術

其它文件與鏈接

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Chen, C. H., Li, Y., Chen, Y. Y., Chen, C. Y., Hsu, S. C., Huang, W. T., Yang, C. M., Chen, L. W., & Chu, S.-Y. (2013). Narrow fin width effect of HKMG bulk FinFET devices. 於 Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 (頁 147-150). (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; 卷 1).

@inproceedings{535e0ef68fa94d67adf2a510556ebd30,

title = "Narrow fin width effect of HKMG bulk FinFET devices",

abstract = "In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.",

author = "Chen, {Chien Hung} and Yiming Li and Chen, {Yu Yu} and Chen, {Chieh Yang} and Hsu, {Sheng Chia} and Huang, {Wen Tsung} and Yang, {Chin Min} and Chen, {Li Wen} and Sheng-Yuan Chu",

year = "2013",

month = aug,

day = "9",

language = "English",

isbn = "9781482205817",

series = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",

pages = "147--150",

booktitle = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",

note = "Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 ; Conference date: 12-05-2013 Through 16-05-2013",

}

Chen, CH, Li, Y, Chen, YY, Chen, CY, Hsu, SC, Huang, WT, Yang, CM, Chen, LW & Chu, S-Y 2013, Narrow fin width effect of HKMG bulk FinFET devices. 於 Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, 卷 1, 頁 147-150, Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, Washington, DC, United States, 13-05-12.

TY - GEN

T1 - Narrow fin width effect of HKMG bulk FinFET devices

AU - Chen, Chien Hung

AU - Li, Yiming

AU - Chen, Yu Yu

AU - Chen, Chieh Yang

AU - Hsu, Sheng Chia

AU - Huang, Wen Tsung

AU - Yang, Chin Min

AU - Chen, Li Wen

AU - Chu, Sheng-Yuan

PY - 2013/8/9

Y1 - 2013/8/9

N2 - In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

AB - In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

UR - http://www.scopus.com/inward/record.url?scp=84881106898&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84881106898&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84881106898

SN - 9781482205817

T3 - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013

SP - 147

EP - 150

BT - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013

T2 - Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013

Y2 - 12 May 2013 through 16 May 2013

ER -

Narrow fin width effect of HKMG bulk FinFET devices

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