TY - JOUR
T1 - Near-band-edge optical properties of MBE-grown ZnSe epilayers on GaAs by modulation spectroscopy
AU - Tu, R. C.
AU - Su, Y. K.
AU - Huang, Y. S.
AU - Chang, S. J.
N1 - Copyright:
Copyright 2005 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 1998
Y1 - 1998
N2 - A study of near-band-edge optical properties on ZnSe epilayers grown on GaAs substrates using various modulation techniques is presented. We compare the contactless electroreflectance (CER) and piezoreflectance (PzR) spectra to ascertain that our ZnSe epilayers of 1.2 μm in thickness grown on GaAs substrates are under a biaxial tensile strain. The defect-related transitions near the ZnSe/GaAs interface are also compared by identifying the photoreflectance (PR) and other spectra. In addition, in order to observe the temperature-dependent energy splitting and strains, we present a detailed investigation of the heavy and light-hole related transition energies as a function of temperature in the 15-200 K range by identifying the excitonic signatures in the CER spectra. We have also calculated the energy splitting between heavy and light-hole valence bands by utilizing the temperature-dependent elastic constants for ZnSe and the thermal-expansion coefficients for ZnSe and GaAs. Both the experimental result and the theoretical calculation have shown a similar trend that the biaxial tensile strains decrease in magnitude with increasing temperatures in the 1.2 μm ZnSe epilayer grown on a GaAs substrate.
AB - A study of near-band-edge optical properties on ZnSe epilayers grown on GaAs substrates using various modulation techniques is presented. We compare the contactless electroreflectance (CER) and piezoreflectance (PzR) spectra to ascertain that our ZnSe epilayers of 1.2 μm in thickness grown on GaAs substrates are under a biaxial tensile strain. The defect-related transitions near the ZnSe/GaAs interface are also compared by identifying the photoreflectance (PR) and other spectra. In addition, in order to observe the temperature-dependent energy splitting and strains, we present a detailed investigation of the heavy and light-hole related transition energies as a function of temperature in the 15-200 K range by identifying the excitonic signatures in the CER spectra. We have also calculated the energy splitting between heavy and light-hole valence bands by utilizing the temperature-dependent elastic constants for ZnSe and the thermal-expansion coefficients for ZnSe and GaAs. Both the experimental result and the theoretical calculation have shown a similar trend that the biaxial tensile strains decrease in magnitude with increasing temperatures in the 1.2 μm ZnSe epilayer grown on a GaAs substrate.
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U2 - 10.1117/12.311024
DO - 10.1117/12.311024
M3 - Conference article
AN - SCOPUS:0032400895
SN - 0277-786X
VL - 3419
SP - 325
EP - 337
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - Optoelectronic Materials and Devices
Y2 - 9 July 1998 through 11 July 1998
ER -