Near room-temperature growth of SiO2 films for p-HgCdTe passivation by liquid phase deposition

Mau-phon Houng, Yeong-Her Wang, Na Fu Wang, Chien Jung Huang, Wai Jyh Chang

研究成果: Article

18 引文 (Scopus)

摘要

We first propose a low temperature process (35 °C-45 °C) for the growth of high-quality SiO2 layer on p-HgCdTe by liquid phase deposition (LPD). In this new formation technology, the surface of HgCdTe substrates was treated with suitable ammonia solution to enhance the generation of OH- radicals which is favorable to the formation of SiO2 films. The refractive index of the SiO2 films is close to 1.465 under the typical growth conditions. The leakage current, surface charges density, and dielectric breakdown strength of the test samples, measured at 77 K, are found to be 0.356 nA (at -5 V), -7.04×1010/cm2, and 650 kV/cm, respectively which are comparable to other techniques. The film quality demonstrates its potential in fabricating infrared devices.

原文English
期刊Japanese Journal of Applied Physics, Part 2: Letters
36
發行號6 A
出版狀態Published - 1997 六月 1

指紋

Growth temperature
Passivation
passivity
liquid phases
Liquids
room temperature
Infrared devices
Surface charge
Charge density
Electric breakdown
Leakage currents
ammonia
Ammonia
Refractive index
leakage
breakdown
refractivity
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

引用此文

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abstract = "We first propose a low temperature process (35 °C-45 °C) for the growth of high-quality SiO2 layer on p-HgCdTe by liquid phase deposition (LPD). In this new formation technology, the surface of HgCdTe substrates was treated with suitable ammonia solution to enhance the generation of OH- radicals which is favorable to the formation of SiO2 films. The refractive index of the SiO2 films is close to 1.465 under the typical growth conditions. The leakage current, surface charges density, and dielectric breakdown strength of the test samples, measured at 77 K, are found to be 0.356 nA (at -5 V), -7.04×1010/cm2, and 650 kV/cm, respectively which are comparable to other techniques. The film quality demonstrates its potential in fabricating infrared devices.",
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AU - Houng, Mau-phon

AU - Wang, Yeong-Her

AU - Wang, Na Fu

AU - Huang, Chien Jung

AU - Chang, Wai Jyh

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