Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs

Chih Chun Hu, Mon Sen Lin, Tsu Yi Wu, Feri Adriyanto, Po Wen Sze, Chang Luen Wu, Yeong-Her Wang

研究成果: Conference contribution

3 引文 (Scopus)

摘要

Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I ON/I OFF ratio (4.5 × 10 5) are obtained.

原文English
主出版物標題Physics and Technology of High-k Materials 9
頁面439-444
頁數6
版本3
DOIs
出版狀態Published - 2011 十二月 1
事件9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States
持續時間: 2011 十月 102011 十月 12

出版系列

名字ECS Transactions
號碼3
41
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Other

Other9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
國家United States
城市Boston, MA
期間11-10-1011-10-12

指紋

High electron mobility transistors
Barium
Liquids
Current density
Metals
Gate dielectrics
Drain current
Leakage currents
Temperature
Electric potential
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Hu, C. C., Lin, M. S., Wu, T. Y., Adriyanto, F., Sze, P. W., Wu, C. L., & Wang, Y-H. (2011). Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs. 於 Physics and Technology of High-k Materials 9 (3 編輯, 頁 439-444). (ECS Transactions; 卷 41, 編號 3). https://doi.org/10.1149/1.3633059
Hu, Chih Chun ; Lin, Mon Sen ; Wu, Tsu Yi ; Adriyanto, Feri ; Sze, Po Wen ; Wu, Chang Luen ; Wang, Yeong-Her. / Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs. Physics and Technology of High-k Materials 9. 3. 編輯 2011. 頁 439-444 (ECS Transactions; 3).
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abstract = "Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I ON/I OFF ratio (4.5 × 10 5) are obtained.",
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Hu, CC, Lin, MS, Wu, TY, Adriyanto, F, Sze, PW, Wu, CL & Wang, Y-H 2011, Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs. 於 Physics and Technology of High-k Materials 9. 3 edn, ECS Transactions, 編號 3, 卷 41, 頁 439-444, 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting, Boston, MA, United States, 11-10-10. https://doi.org/10.1149/1.3633059

Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs. / Hu, Chih Chun; Lin, Mon Sen; Wu, Tsu Yi; Adriyanto, Feri; Sze, Po Wen; Wu, Chang Luen; Wang, Yeong-Her.

Physics and Technology of High-k Materials 9. 3. 編輯 2011. p. 439-444 (ECS Transactions; 卷 41, 編號 3).

研究成果: Conference contribution

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AU - Hu, Chih Chun

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AU - Sze, Po Wen

AU - Wu, Chang Luen

AU - Wang, Yeong-Her

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N2 - Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I ON/I OFF ratio (4.5 × 10 5) are obtained.

AB - Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I ON/I OFF ratio (4.5 × 10 5) are obtained.

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Hu CC, Lin MS, Wu TY, Adriyanto F, Sze PW, Wu CL 等. Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs. 於 Physics and Technology of High-k Materials 9. 3 編輯 2011. p. 439-444. (ECS Transactions; 3). https://doi.org/10.1149/1.3633059