Near-room-temperature selective oxidation on GaAs using photoresist as a mask

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

Selective oxidation on GaAs operated at near room temperature, by a liquid phase chemically enhanced method using photoresist as a mask, is proposed and demonstrated. Because of the low temperature and electroless features of the oxidation method, the process is simple, economic and reliable. Good electrical insulating properties comparable with those of thermal oxide have been obtained. According to the results of X-ray photoelectron spectroscopy, the chemistry of the oxide surface is stable after thermal annealing. The thermal stability shows the potential for device fabrication.

原文English
頁(從 - 到)L988-L990
期刊Japanese Journal of Applied Physics, Part 2: Letters
37
發行號8 SUPPL. B
DOIs
出版狀態Published - 1998 8月 15

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學(雜項)
  • 物理與天文學 (全部)

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