Selective oxidation on GaAs operated at near room temperature, by a liquid phase chemically enhanced method using photoresist as a mask, is proposed and demonstrated. Because of the low temperature and electroless features of the oxidation method, the process is simple, economic and reliable. Good electrical insulating properties comparable with those of thermal oxide have been obtained. According to the results of X-ray photoelectron spectroscopy, the chemistry of the oxide surface is stable after thermal annealing. The thermal stability shows the potential for device fabrication.
|頁（從 - 到）||L988-L990|
|期刊||Japanese Journal of Applied Physics, Part 2: Letters|
|發行號||8 SUPPL. B|
|出版狀態||Published - 1998 8月 15|
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)