Near-room-temperature selective oxidation on InAlAs and application to In0.52 Al0.48 As In0.53 Ga0.47 As metamorphic HEMTs

Kuan Wei Lee, Kai Lin Lee, Hsien Chang Lin, Chao Hsien Tu, Chih Chun Hu, Yeong Her Wang

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The selective oxidation on InAlAs operated at near-room temperature by liquid phase oxidation using photoresist or metal as a mask is proposed, and further application to In0.52 Al0.48 As In0.53 Ga0.47 As metal-oxide- semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) is conducted. Besides selective oxidation between oxide film and photoresist or metal, the oxide surface composition for a long oxidation time is also evaluated. Before gate metallization in device fabrication, two commonly used gate recess processes are accessed, and the root mean square value of surface roughness is estimated to be 0.72 and 0.14 nm by the H3 P O4 -based etchant and the citric acid-based etchant, respectively. As compared to the conventional MHEMT, the fabricated MOS-MHEMT exhibits 4-5 orders of magnitude lower gate leakage, and an improved rf performance.

原文English
頁(從 - 到)H957-H961
期刊Journal of the Electrochemical Society
154
發行號11
DOIs
出版狀態Published - 2007

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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