摘要
In this article, we have proposed a nanostructured near-ultraviolet photodetector (<400 nm) based on the ZnO nanorod/polyfluorene hybrid by solution processes at low temperature. The current-voltage characteristic of the hybrid device demonstrates the typical pn-heterojunction diode behavior, consisting of p-type polymer and n-type ZnO nanorods, respectively. The relative quantum efficiencies of the hybrid device exhibit a nearly three order difference while illuminated under UV and visible light, respectively. The responsivity for the device can reach to 0.18 AW at 300 nm by applying a bias of -2 V, which provides a route to fabricate a low-cost near-UV photodetector.
原文 | English |
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文章編號 | 233301 |
期刊 | Applied Physics Letters |
卷 | 92 |
發行號 | 23 |
DOIs | |
出版狀態 | Published - 2008 |
All Science Journal Classification (ASJC) codes
- 物理與天文學(雜項)