Negative differential resistance in a novel GaAs delta-doping tunneling diode

Ruey Lue Wang, Yun Kuin Su, Yeong-Her Wang

研究成果: Paper

摘要

In this letter, we show a novel GaAs delta-doping induced triangle-like double-barrier quantum well diode. The double barriers are induced by the δn + -i-δp + -i-δn + structure grown by delta-doping technique. The current-voltage characteristics exhibits two different types of negative differential resistance (NDR) at low and high bias, respectively. At low bias, N-type NDRs with peak-to-valley ratio 1.5 were observed due to resonant tunneling effect. An S-type NDR existed at high bias. This results from impact ionization in high electric field.

原文English
頁面27-29
頁數3
出版狀態Published - 1990 十二月 1
事件22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
持續時間: 1990 八月 221990 八月 24

Other

Other22nd International Conference on Solid State Devices and Materials
城市Sendai, Jpn
期間90-08-2290-08-24

指紋

Diodes
Doping (additives)
Resonant tunneling
Impact ionization
Current voltage characteristics
Semiconductor quantum wells
Electric fields

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Wang, R. L., Su, Y. K., & Wang, Y-H. (1990). Negative differential resistance in a novel GaAs delta-doping tunneling diode. 27-29. 論文發表於 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .
Wang, Ruey Lue ; Su, Yun Kuin ; Wang, Yeong-Her. / Negative differential resistance in a novel GaAs delta-doping tunneling diode. 論文發表於 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .3 p.
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Wang, RL, Su, YK & Wang, Y-H 1990, 'Negative differential resistance in a novel GaAs delta-doping tunneling diode' 論文發表於 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, 90-08-22 - 90-08-24, 頁 27-29.

Negative differential resistance in a novel GaAs delta-doping tunneling diode. / Wang, Ruey Lue; Su, Yun Kuin; Wang, Yeong-Her.

1990. 27-29 論文發表於 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .

研究成果: Paper

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N2 - In this letter, we show a novel GaAs delta-doping induced triangle-like double-barrier quantum well diode. The double barriers are induced by the δn + -i-δp + -i-δn + structure grown by delta-doping technique. The current-voltage characteristics exhibits two different types of negative differential resistance (NDR) at low and high bias, respectively. At low bias, N-type NDRs with peak-to-valley ratio 1.5 were observed due to resonant tunneling effect. An S-type NDR existed at high bias. This results from impact ionization in high electric field.

AB - In this letter, we show a novel GaAs delta-doping induced triangle-like double-barrier quantum well diode. The double barriers are induced by the δn + -i-δp + -i-δn + structure grown by delta-doping technique. The current-voltage characteristics exhibits two different types of negative differential resistance (NDR) at low and high bias, respectively. At low bias, N-type NDRs with peak-to-valley ratio 1.5 were observed due to resonant tunneling effect. An S-type NDR existed at high bias. This results from impact ionization in high electric field.

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Wang RL, Su YK, Wang Y-H. Negative differential resistance in a novel GaAs delta-doping tunneling diode. 1990. 論文發表於 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .