Neodymium-doped GaAs light-emitting diodes

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.

原文English
頁(從 - 到)4279-4281
頁數3
期刊Journal of Applied Physics
78
發行號6
DOIs
出版狀態Published - 1995

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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