New a-IGZO Pixel Circuit Composed of Three Transistors and One Capacitor for Use in High-Speed-Scan AMOLED Displays

Chih Lung Lin, Fu Hsing Chen, Chia Che Hung, Po Syun Chen, Ming Yang Deng, Chun Ming Lu, Tzuen Hsi Huang

研究成果: Article

17 引文 斯高帕斯(Scopus)

摘要

An amorphous indium-gallium-zinc-oxide (a-IGZO) pixel circuit with three transistors and one capacitor is proposed for use in high-speed-scan active-matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit can compensate for the threshold voltage shifts in both normally-off and normally-on a-IGZO TFTs. Based on the simulation results with ±1 V threshold voltage shifts of the driving TFT, the relative error rates of OLED currents are less than 4.46% for the entire range of data voltages (-9.9 V∼5 V).

原文English
文章編號7303874
頁(從 - 到)1031-1034
頁數4
期刊Journal of Display Technology
11
發行號12
DOIs
出版狀態Published - 2015 十二月

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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