New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

Wen-Chau Liu, Jung Hui Tsai, Lih Wen Laih, H. R. Chen, Shiou Ying Cheng, Wei Chou Wang, Po Hung Lin, Jing Yuh Chen

研究成果: Paper

摘要

A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.

原文English
頁面247-250
頁數4
出版狀態Published - 1996 十二月 1
事件Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust
持續時間: 1996 十二月 81996 十二月 11

Other

OtherProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
城市Canberra, Aust
期間96-12-0896-12-11

指紋

Semiconductor quantum wells
Heterojunctions
Transistors
Valence bands
Electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Liu, W-C., Tsai, J. H., Laih, L. W., Chen, H. R., Cheng, S. Y., Wang, W. C., ... Chen, J. Y. (1996). New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT). 247-250. 論文發表於 Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, .
Liu, Wen-Chau ; Tsai, Jung Hui ; Laih, Lih Wen ; Chen, H. R. ; Cheng, Shiou Ying ; Wang, Wei Chou ; Lin, Po Hung ; Chen, Jing Yuh. / New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT). 論文發表於 Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, .4 p.
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title = "New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)",
abstract = "A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.",
author = "Wen-Chau Liu and Tsai, {Jung Hui} and Laih, {Lih Wen} and Chen, {H. R.} and Cheng, {Shiou Ying} and Wang, {Wei Chou} and Lin, {Po Hung} and Chen, {Jing Yuh}",
year = "1996",
month = "12",
day = "1",
language = "English",
pages = "247--250",
note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

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Liu, W-C, Tsai, JH, Laih, LW, Chen, HR, Cheng, SY, Wang, WC, Lin, PH & Chen, JY 1996, 'New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)', 論文發表於 Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, 96-12-08 - 96-12-11 頁 247-250.

New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT). / Liu, Wen-Chau; Tsai, Jung Hui; Laih, Lih Wen; Chen, H. R.; Cheng, Shiou Ying; Wang, Wei Chou; Lin, Po Hung; Chen, Jing Yuh.

1996. 247-250 論文發表於 Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, .

研究成果: Paper

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T1 - New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

AU - Liu, Wen-Chau

AU - Tsai, Jung Hui

AU - Laih, Lih Wen

AU - Chen, H. R.

AU - Cheng, Shiou Ying

AU - Wang, Wei Chou

AU - Lin, Po Hung

AU - Chen, Jing Yuh

PY - 1996/12/1

Y1 - 1996/12/1

N2 - A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.

AB - A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.

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Liu W-C, Tsai JH, Laih LW, Chen HR, Cheng SY, Wang WC 等. New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT). 1996. 論文發表於 Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, .