A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.
|出版狀態||Published - 1996|
|事件||Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust|
持續時間: 1996 12月 8 → 1996 12月 11
|Other||Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD|
|期間||96-12-08 → 96-12-11|
All Science Journal Classification (ASJC) codes
- 工程 (全部)