New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

Wen Chau Liu; Jung Hui Tsai; Lih Wen Laih; H. R. Chen; Shiou Ying Cheng; Wei Chou Wang; Po Hung Lin; Jing Yuh Chen

New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

Wen Chau Liu, Jung Hui Tsai, Lih Wen Laih, H. R. Chen, Shiou Ying Cheng, Wei Chou Wang, Po Hung Lin, Jing Yuh Chen

微電子工程研究所

研究成果: Paper › 同行評審

摘要

A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.

原文	English
頁面	247-250
頁數	4
出版狀態	Published - 1996
事件	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust 持續時間: 1996 12月 8 → 1996 12月 11

Other

Other	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
城市	Canberra, Aust
期間	96-12-08 → 96-12-11

All Science Journal Classification (ASJC) codes

一般工程

其它文件與鏈接

引用此

@conference{e23a49e8b750478ebb2cda51fa9abdde,

title = "New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)",

abstract = "A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.",

author = "Liu, {Wen Chau} and Tsai, {Jung Hui} and Laih, {Lih Wen} and Chen, {H. R.} and Cheng, {Shiou Ying} and Wang, {Wei Chou} and Lin, {Po Hung} and Chen, {Jing Yuh}",

year = "1996",

language = "English",

pages = "247--250",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

TY - CONF

T1 - New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

AU - Liu, Wen Chau

AU - Tsai, Jung Hui

AU - Laih, Lih Wen

AU - Chen, H. R.

AU - Cheng, Shiou Ying

AU - Wang, Wei Chou

AU - Lin, Po Hung

AU - Chen, Jing Yuh

PY - 1996

Y1 - 1996

N2 - A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.

AB - A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0030356357&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030356357&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030356357

SP - 247

EP - 250

T2 - Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD

Y2 - 8 December 1996 through 11 December 1996

ER -

New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

摘要

Other

All Science Journal Classification (ASJC) codes

其它文件與鏈接

指紋

引用此