A three-terminal GaAs negative differential resistance device prepared by molecular-beam epitaxy is described. The negative differential resistance characteristic is due to the bipolar-unipolar transition effect. The device is an n-shaped and voltage-controlled utilizing a n** plus -i- delta p** plus thin base. The peak-to-valley current ratios are modulated by a third external applied voltage. A large peak-to-valley current ratio of 98 was obtained for a base-to-emitter forward bias of 5 V at room temperature, at an applied emitter-collector bias of 5. 7 V.
|頁（從 - 到）||74-77|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1987 12月 1|
All Science Journal Classification (ASJC) codes