NEW GaAs BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE DEVICE (BUNDR).

K. F. Yarn, Y. H. Wang, C. Y. Chang, M. S. Jame

研究成果: Conference article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A three-terminal GaAs negative differential resistance device prepared by molecular-beam epitaxy is described. The negative differential resistance characteristic is due to the bipolar-unipolar transition effect. The device is an n-shaped and voltage-controlled utilizing a n** plus -i- delta p** plus thin base. The peak-to-valley current ratios are modulated by a third external applied voltage. A large peak-to-valley current ratio of 98 was obtained for a base-to-emitter forward bias of 5 V at room temperature, at an applied emitter-collector bias of 5. 7 V.

原文English
頁(從 - 到)74-77
頁數4
期刊Technical Digest - International Electron Devices Meeting
出版狀態Published - 1987 十二月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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