New GaAs n + -p-δ(n +) -i-δ(p +)-i-n + switching device grown by molecular beam epitaxy

Wen-Chau Liu, C. Y. Sun

研究成果: Article

摘要

A new GaAs switching device with an n+-p-δ(n+)-i-δ(p+)-i-n+ structure has been demonstrated. An interesting S-shaped negative differential resistance (NDR) is shown to occur that originates from the avalanche multiplications within the δ(n+)-i-δ(p+)-i sawtooth doped superlattice (SDS). The excellent NDR behaviour gives the studied structure good potential for switching device applications. Furthermore, with an adequate design, the studied structure can be applied to fabricate a new functional device.

原文English
頁(從 - 到)1704-1706
頁數3
期刊Electronics Letters
27
發行號19
DOIs
出版狀態Published - 1991 八月 29

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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