This work presents a hydrogenated amorphous silicon (a-Si:H) gate driver circuit for active-matrix liquid crystal displays (AMLCDs) equipped with in-cell touch structure. The display operation can be paused several times in a frame with the horizontal blank driving method to increase the touch reporting rate. Moreover, the pre-charge structure is utilized to reduce the threshold voltage (VTH) shift of driving TFT during touch sensing operation. Simulation results confirm that the proposed gate driver circuit can generate reliable output waveforms after touch sensing period (200 μs) at 85 °C. The rising time and falling time are respectively maintained at 2.73 μs and 1.92 μs, demonstrating the feasibility of proposed circuit appling to AMLCDs equipped with in-cell touch structure.