NEW HIGH SPEED DEVICE: THE TEG-BASE TRANSISTOR.

C. Y. Chang, W. C. Liu, M. S. Jame, Y. H. Wang

研究成果: Conference contribution

摘要

We present a new high speed transistor, the V-grooved TEG-base transistor (TEG BT) which is a majority carrier (hot) transport device with a modulation of the barrier directly by the V//E//B bias. By using a two dimensional electron gas as the base, the structure is n** plus GaAs/graded i-AlGaAs/i-GaAs (TEG base) /i-AlGaAs/n** plus GaAs, which has revealed high gain ( alpha approximately equals 0. 96) and ultra high speed (approximately 1ps).

原文English
主出版物標題Conference on Solid State Devices and Materials
發行者Business Cent for Academic Soc Japan
頁面355-357
頁數3
ISBN(列印)493081314X, 9784930813145
DOIs
出版狀態Published - 1986

出版系列

名字Conference on Solid State Devices and Materials

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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