We present a new high speed transistor, the V-grooved TEG-base transistor (TEG BT) which is a majority carrier (hot) transport device with a modulation of the barrier directly by the V//E//B bias. By using a two dimensional electron gas as the base, the structure is n** plus GaAs/graded i-AlGaAs/i-GaAs (TEG base) /i-AlGaAs/n** plus GaAs, which has revealed high gain ( alpha approximately equals 0. 96) and ultra high speed (approximately 1ps).
|主出版物標題||Conference on Solid State Devices and Materials|
|發行者||Business Cent for Academic Soc Japan|
|出版狀態||Published - 1986|
|名字||Conference on Solid State Devices and Materials|
All Science Journal Classification (ASJC) codes
- 工程 (全部)