New InGaP/GaAs double delta-doped heterojunction bipolar transistor (D3HBT)

Shiou Ying Cheng, Wei Chou Wang, Wen Lung Chang, Jing Yuh Chen, His Jen Pan, Wen Chau Liu

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

A new InGaP/GaAs double delta-doped heterojunction bipolar transistor (D3HBT) has been fabricated successfully and demonstrated. Due to the employment of delta-doped sheets, the potential spikes at emitter-base (E-B) and base-collector (B-C) heterojunctions are suppressed considerably. Therefore, good transistor performance including higher current gain and lower knee voltage are obtained.

原文English
頁(從 - 到)270-272
頁數3
期刊Thin Solid Films
345
發行號2
DOIs
出版狀態Published - 1999 五月 21

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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