New InGaP/GaAs double delta-doped heterojunction bipolar transistor (D3HBT)

Shiou Ying Cheng; Wei Chou Wang; Wen Lung Chang; Jing Yuh Chen; His Jen Pan; Wen Chau Liu

doi:10.1016/S0040-6090(98)01422-9

New InGaP/GaAs double delta-doped heterojunction bipolar transistor (D³HBT)

Shiou Ying Cheng, Wei Chou Wang, Wen Lung Chang, Jing Yuh Chen, His Jen Pan, Wen Chau Liu

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

A new InGaP/GaAs double delta-doped heterojunction bipolar transistor (D³HBT) has been fabricated successfully and demonstrated. Due to the employment of delta-doped sheets, the potential spikes at emitter-base (E-B) and base-collector (B-C) heterojunctions are suppressed considerably. Therefore, good transistor performance including higher current gain and lower knee voltage are obtained.

原文	English
頁（從 - 到）	270-272
頁數	3
期刊	Thin Solid Films
卷	345
發行號	2
DOIs	https://doi.org/10.1016/S0040-6090(98)01422-9
出版狀態	Published - 1999 五月 21

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

存取文件

10.1016/S0040-6090(98)01422-9

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引用此

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abstract = "A new InGaP/GaAs double delta-doped heterojunction bipolar transistor (D3HBT) has been fabricated successfully and demonstrated. Due to the employment of delta-doped sheets, the potential spikes at emitter-base (E-B) and base-collector (B-C) heterojunctions are suppressed considerably. Therefore, good transistor performance including higher current gain and lower knee voltage are obtained.",

author = "Cheng, {Shiou Ying} and Wang, {Wei Chou} and Chang, {Wen Lung} and Chen, {Jing Yuh} and Pan, {His Jen} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contact No.: NSC87-2215-E006-020",

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AU - Cheng, Shiou Ying

AU - Wang, Wei Chou

AU - Chang, Wen Lung

AU - Chen, Jing Yuh

AU - Pan, His Jen

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contact No.: NSC87-2215-E006-020

PY - 1999/5/21

Y1 - 1999/5/21

N2 - A new InGaP/GaAs double delta-doped heterojunction bipolar transistor (D3HBT) has been fabricated successfully and demonstrated. Due to the employment of delta-doped sheets, the potential spikes at emitter-base (E-B) and base-collector (B-C) heterojunctions are suppressed considerably. Therefore, good transistor performance including higher current gain and lower knee voltage are obtained.

AB - A new InGaP/GaAs double delta-doped heterojunction bipolar transistor (D3HBT) has been fabricated successfully and demonstrated. Due to the employment of delta-doped sheets, the potential spikes at emitter-base (E-B) and base-collector (B-C) heterojunctions are suppressed considerably. Therefore, good transistor performance including higher current gain and lower knee voltage are obtained.

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JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

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