摘要
An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.
| 原文 | English |
|---|---|
| 頁面 | 243-245 |
| 頁數 | 3 |
| 出版狀態 | Published - 1999 1月 1 |
| 事件 | Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust 持續時間: 1998 12月 14 → 1998 12月 16 |
Other
| Other | Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices |
|---|---|
| 城市 | Perth, WA, Aust |
| 期間 | 98-12-14 → 98-12-16 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料