New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

Wen-Chau Liu, W. C. Wang, W. L. Chang, K. H. Yu, S. C. Feng, J. H. Yan

研究成果: Paper

摘要

An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

原文English
頁面243-245
頁數3
出版狀態Published - 1999 一月 1
事件Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
持續時間: 1998 十二月 141998 十二月 16

Other

OtherProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
城市Perth, WA, Aust
期間98-12-1498-12-16

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此

Liu, W-C., Wang, W. C., Chang, W. L., Yu, K. H., Feng, S. C., & Yan, J. H. (1999). New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector. 243-245. 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .