An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.
|出版狀態||Published - 1999 一月 1|
|事件||Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust|
持續時間: 1998 十二月 14 → 1998 十二月 16
|Other||Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices|
|城市||Perth, WA, Aust|
|期間||98-12-14 → 98-12-16|
All Science Journal Classification (ASJC) codes