摘要
The authors report an improved approach to modelling the I-V characteristics of a multipeak resonant tunnelling diode (RTD). The merit of this new RTD model is demonstrated.
原文 | English |
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頁(從 - 到) | 1012-1013 |
頁數 | 2 |
期刊 | Electronics Letters |
卷 | 30 |
發行號 | 12 |
DOIs | |
出版狀態 | Published - 1994 6月 9 |
All Science Journal Classification (ASJC) codes
- 電氣與電子工程