(NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer

C. H. Lan; J. D. Hwang; S. J. Chang; Y. C. Cheng; W. J. Lin; J. C. Lin; J. S. Liao; Y. L. Lin

doi:10.1149/1.3374659

(NH₄)₂ S_x -treated AlGaN MIS photodetectors with LPD SiO₂ layer

C. H. Lan, J. D. Hwang, S. J. Chang, Y. C. Cheng, W. J. Lin, J. C. Lin, J. S. Liao, Y. L. Lin

微電子工程研究所

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

(NH₄)₂ S_x treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO₂ layer. With (NH₄)₂ S_x treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH ₄)₂ S_x treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH₄) ₂ S_x treatment was also significantly larger.

原文	English
頁（從 - 到）	H613-H616
期刊	Journal of the Electrochemical Society
卷	157
發行號	6
DOIs	https://doi.org/10.1149/1.3374659
出版狀態	Published - 2010

All Science Journal Classification (ASJC) codes

電子、光磁材料
可再生能源、永續發展與環境
表面、塗料和薄膜
電化學
材料化學

UN SDG

此研究成果有助於以下永續發展目標

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10.1149/1.3374659

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@article{3f11e10231954fe4807e1a33c8648af0,

title = "(NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer",

abstract = "(NH4)2 Sx treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO2 layer. With (NH4)2 Sx treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH 4)2 Sx treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH4) 2 Sx treatment was also significantly larger.",

author = "Lan, {C. H.} and Hwang, {J. D.} and Chang, {S. J.} and Cheng, {Y. C.} and Lin, {W. J.} and Lin, {J. C.} and Liao, {J. S.} and Lin, {Y. L.}",

year = "2010",

doi = "10.1149/1.3374659",

language = "English",

volume = "157",

pages = "H613--H616",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "6",

}

TY - JOUR

T1 - (NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer

AU - Lan, C. H.

AU - Hwang, J. D.

AU - Chang, S. J.

AU - Cheng, Y. C.

AU - Lin, W. J.

AU - Lin, J. C.

AU - Liao, J. S.

AU - Lin, Y. L.

PY - 2010

Y1 - 2010

N2 - (NH4)2 Sx treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO2 layer. With (NH4)2 Sx treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH 4)2 Sx treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH4) 2 Sx treatment was also significantly larger.

AB - (NH4)2 Sx treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO2 layer. With (NH4)2 Sx treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH 4)2 Sx treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH4) 2 Sx treatment was also significantly larger.

UR - http://www.scopus.com/inward/record.url?scp=77958569311&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958569311&partnerID=8YFLogxK

U2 - 10.1149/1.3374659

DO - 10.1149/1.3374659

M3 - Article

AN - SCOPUS:77958569311

SN - 0013-4651

VL - 157

SP - H613-H616

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 6

ER -