(NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer

C. H. Lan, J. D. Hwang, Shoou-Jinn Chang, Y. C. Cheng, W. J. Lin, J. C. Lin, J. S. Liao, Y. L. Lin

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

(NH4)2 Sx treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO2 layer. With (NH4)2 Sx treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH 4)2 Sx treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH4) 2 Sx treatment was also significantly larger.

原文English
期刊Journal of the Electrochemical Society
157
發行號6
DOIs
出版狀態Published - 2010 十一月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

引用此

Lan, C. H., Hwang, J. D., Chang, S-J., Cheng, Y. C., Lin, W. J., Lin, J. C., Liao, J. S., & Lin, Y. L. (2010). (NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer. Journal of the Electrochemical Society, 157(6). https://doi.org/10.1149/1.3374659