Ni/Au contacts on homoepitaxial p-ZnSe with surface oxygen plasma treatments

T. K. Lin, K. T. Lam, S. J. Chang, Y. Z. Chiou, S. P. Chang

研究成果: Article同行評審

摘要

Contact properties of NiAu on homoepitaxial p-ZnSe with oxygen plasma treatments were investigated. The authors found that Zn distribution profiles for p-ZnSe with and without treatments were almost identical. They also found that Se concentration near the surface decreased while O concentration near the surface increased after oxygen plasma treatment. They also observed hillocks, which were related to Se vacancies and/or isoelectronic oxygen impurities, on the surface of 15 W oxygen plasma-treated samples. Furthermore, they found that they could achieve the lowest offset voltage from the sample treated with 15 W oxygen plasma.

原文English
頁(從 - 到)213-216
頁數4
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
25
發行號1
DOIs
出版狀態Published - 2007

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

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