摘要
Contact properties of NiAu on homoepitaxial p-ZnSe with oxygen plasma treatments were investigated. The authors found that Zn distribution profiles for p-ZnSe with and without treatments were almost identical. They also found that Se concentration near the surface decreased while O concentration near the surface increased after oxygen plasma treatment. They also observed hillocks, which were related to Se vacancies and/or isoelectronic oxygen impurities, on the surface of 15 W oxygen plasma-treated samples. Furthermore, they found that they could achieve the lowest offset voltage from the sample treated with 15 W oxygen plasma.
原文 | English |
---|---|
頁(從 - 到) | 213-216 |
頁數 | 4 |
期刊 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
卷 | 25 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 2007 |
All Science Journal Classification (ASJC) codes
- 凝聚態物理學
- 電氣與電子工程