Nitride-based 2DEG photodetectors with a large AC responsivity

S. J. Chang, T. M. Kuan, C. H. Ko, Y. K. Su, J. B. Webb, J. A. Bardwell, Y. Liu, H. Tang, W. J. Lin, Y. T. Cherng, W. H. Lan

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsivity due to the use of AlGaN/GaN heterostructure. With an incident light wavelength of 270 nm, it was found that the AC responsivity could reach 8.7 × 106 A/W.

原文English
頁(從 - 到)2023-2026
頁數4
期刊Solid-State Electronics
47
發行號11
DOIs
出版狀態Published - 2003 11月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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