Nitride-based 2DEG photodetectors with a large AC responsivity

S. J. Chang; T. M. Kuan; C. H. Ko; Y. K. Su; J. B. Webb; J. A. Bardwell; Y. Liu; H. Tang; W. J. Lin; Y. T. Cherng; W. H. Lan

doi:10.1016/S0038-1101(03)00246-6

Nitride-based 2DEG photodetectors with a large AC responsivity

S. J. Chang, T. M. Kuan, C. H. Ko, Y. K. Su, J. B. Webb, J. A. Bardwell, Y. Liu, H. Tang, W. J. Lin, Y. T. Cherng, W. H. Lan

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsivity due to the use of AlGaN/GaN heterostructure. With an incident light wavelength of 270 nm, it was found that the AC responsivity could reach 8.7 × 10⁶ A/W.

原文	English
頁（從 - 到）	2023-2026
頁數	4
期刊	Solid-State Electronics
卷	47
發行號	11
DOIs	https://doi.org/10.1016/S0038-1101(03)00246-6
出版狀態	Published - 2003 11月

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

存取文件

10.1016/S0038-1101(03)00246-6

其它文件與鏈接

引用此

@article{518cc95e33514682abb42806ba9c7b4a,

title = "Nitride-based 2DEG photodetectors with a large AC responsivity",

abstract = "Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsivity due to the use of AlGaN/GaN heterostructure. With an incident light wavelength of 270 nm, it was found that the AC responsivity could reach 8.7 × 106 A/W.",

author = "Chang, {S. J.} and Kuan, {T. M.} and Ko, {C. H.} and Su, {Y. K.} and Webb, {J. B.} and Bardwell, {J. A.} and Y. Liu and H. Tang and Lin, {W. J.} and Cherng, {Y. T.} and Lan, {W. H.}",

note = "Funding Information: The authors would like to acknowledge the financial support from the National Science Council for their research grant of NSC 90-2215-E-008-043.",

year = "2003",

month = nov,

doi = "10.1016/S0038-1101(03)00246-6",

language = "English",

volume = "47",

pages = "2023--2026",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "11",

}

TY - JOUR

T1 - Nitride-based 2DEG photodetectors with a large AC responsivity

AU - Chang, S. J.

AU - Kuan, T. M.

AU - Ko, C. H.

AU - Su, Y. K.

AU - Webb, J. B.

AU - Bardwell, J. A.

AU - Liu, Y.

AU - Tang, H.

AU - Lin, W. J.

AU - Cherng, Y. T.

AU - Lan, W. H.

N1 - Funding Information: The authors would like to acknowledge the financial support from the National Science Council for their research grant of NSC 90-2215-E-008-043.

PY - 2003/11

Y1 - 2003/11

N2 - Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsivity due to the use of AlGaN/GaN heterostructure. With an incident light wavelength of 270 nm, it was found that the AC responsivity could reach 8.7 × 106 A/W.

AB - Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsivity due to the use of AlGaN/GaN heterostructure. With an incident light wavelength of 270 nm, it was found that the AC responsivity could reach 8.7 × 106 A/W.

UR - http://www.scopus.com/inward/record.url?scp=0043231405&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0043231405&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(03)00246-6

DO - 10.1016/S0038-1101(03)00246-6

M3 - Article

AN - SCOPUS:0043231405

VL - 47

SP - 2023

EP - 2026

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 11

ER -

Nitride-based 2DEG photodetectors with a large AC responsivity

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此