@article{4a6cc8dbbaa149a185c772b23e15050d,
title = "Nitride-based asymmetric two-step light-emitting diode with In 0.08Ga0.92N shallow step",
abstract = "A nitride-based asymmetric two-step light-emitting diode (LED) with In 0.08Ga0.92N shallow step was proposed and fabricated. It was found that the low indium content In0.08Ga0.92N layer can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. It was also found that we can enhance LED output power by a factor of 2.27 by simply inserting an In0.08Ga0.92N shallow step.",
author = "Kuo, {Cheng Huang} and Fu, {Y. K.} and Yeh, {C. L.} and Tun, {C. J.} and Chen, {P. H.} and Lai, {Wei Chih} and Chang, {Shoou Jinn}",
note = "Funding Information: Manuscript received October 03, 2008; revised December 14, 2008. First published February 02, 2009; current version published March 11, 2009. This work was supported by the National Science Council under Research Grant NSC-95-2221-E-008-125-MY3. C.-H. Kuo, Y. K. Fu, and C. L. Yeh are with the Department of Optics and Photonics, National Central University, Jhongli City, Taoyuan County 32001, Taiwan. C. J. Tun is with the National Synchrotron Radiation Research Center. P. H. Chen and W.-C. Lai are with the Institute of Electro-Optical Science and Engineering, National Cheng Kung University. S.-J. Chang is with the Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2008.2012118",
year = "2009",
month = mar,
day = "15",
doi = "10.1109/LPT.2008.2012118",
language = "English",
volume = "21",
pages = "371--373",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}