摘要
Nitride-based light emitting diode (LED) with dual-stage multiquantum well (MQW) structure is proposed and fabricated. It was found that we could improve crystal quality, reduce reverse leakage current, and reduce forward voltage of the LED by inserting the electron emitter MQW structure. With 20 mA current injection, it was found that measured output powers were 3.2 and 4.7 mW for the conventional single-stage MQW LED and the dual-stage MQW LED, respectively. Furthermore, it was found that electrostatic discharge characteristics of the dual-stage MQW LED are better.
原文 | English |
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頁(從 - 到) | H871-H874 |
期刊 | Journal of the Electrochemical Society |
卷 | 154 |
發行號 | 10 |
DOIs | |
出版狀態 | Published - 2007 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 可再生能源、永續發展與環境
- 表面、塗料和薄膜
- 電化學
- 材料化學