Nitride-based green light-emitting diodes with high temperature GaN barrier layers

L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, T. C. Wen, C. H. Kuo, W. C. Lai, C. S. Chang, J. M. Tsai, J. K. Sheu

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

High-quality InGaN-GaN multiquantum well (MQW) light-emitting diode (LED) structures were prepared by temperature ramping method during metalorganic chemical vapor deposition (MOCVD) growth. It was found that we could reduce the 20-mA forward voltage and increase the output intensity of the nitride-based green LEDs by increasing the growth temperature of GaN barrier layers from 700 °C to 950 °C. The 20-mA output power and maximum output power of the nitride-based green LEDs with high temperature GaN barrier layers was found to be 2.2 and 8.9 mW, respectively, which were more than 65% larger than those observed from conventional InGaN-GaN green LEDs. Such an observation could be attributed to the improved crystal quality of GaN barrier layers. The reliability of these LEDs was also found to be reasonably good.

原文English
頁(從 - 到)1766-1770
頁數5
期刊IEEE Transactions on Electron Devices
50
發行號8
DOIs
出版狀態Published - 2003 八月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

指紋

深入研究「Nitride-based green light-emitting diodes with high temperature GaN barrier layers」主題。共同形成了獨特的指紋。

引用此