TY - JOUR
T1 - Nitride-based LEDs with MQW active regions grown by different temperature profiles
AU - Chang, Shoou Jinn
AU - Wei, S. C.
AU - Su, Y. K.
AU - Chuang, R. W.
AU - Chen, S. M.
AU - Li, W. L.
N1 - Funding Information:
Manuscript received November 22, 2004; revised May 10, 2005. This work was supported by the National Science Council under Research Grants NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046.
PY - 2005/9
Y1 - 2005/9
N2 - Nitride-based light-emitting diodes (LEDs) with multiple quantum-well active regions were separately prepared by metal-organic vapor phase epitaxy in different temperature profiles. Compared with conventional samples, the reduced reverse leakage current and improved electrostatic discharge characteristics of the LEDs can both be achieved using temperature ramping and temperature cycling methods. However, using the temperature ramping may degrade the optical properties of devices due to desorption of In atoms and/or impurity incorporation. With an emission wavelength of 465 nm, the 20-mA output powers measured were 5.5, 6.0, and 7.9 mW for temperature ramping LED, conventional LED, and temperature cycling LED, respectively.
AB - Nitride-based light-emitting diodes (LEDs) with multiple quantum-well active regions were separately prepared by metal-organic vapor phase epitaxy in different temperature profiles. Compared with conventional samples, the reduced reverse leakage current and improved electrostatic discharge characteristics of the LEDs can both be achieved using temperature ramping and temperature cycling methods. However, using the temperature ramping may degrade the optical properties of devices due to desorption of In atoms and/or impurity incorporation. With an emission wavelength of 465 nm, the 20-mA output powers measured were 5.5, 6.0, and 7.9 mW for temperature ramping LED, conventional LED, and temperature cycling LED, respectively.
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U2 - 10.1109/LPT.2005.853270
DO - 10.1109/LPT.2005.853270
M3 - Article
AN - SCOPUS:27144447672
SN - 1041-1135
VL - 17
SP - 1806
EP - 1808
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 9
ER -