Nitride-based LEDs with MQW active regions grown by different temperature profiles

Shoou Jinn Chang, S. C. Wei, Y. K. Su, R. W. Chuang, S. M. Chen, W. L. Li

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)


Nitride-based light-emitting diodes (LEDs) with multiple quantum-well active regions were separately prepared by metal-organic vapor phase epitaxy in different temperature profiles. Compared with conventional samples, the reduced reverse leakage current and improved electrostatic discharge characteristics of the LEDs can both be achieved using temperature ramping and temperature cycling methods. However, using the temperature ramping may degrade the optical properties of devices due to desorption of In atoms and/or impurity incorporation. With an emission wavelength of 465 nm, the 20-mA output powers measured were 5.5, 6.0, and 7.9 mW for temperature ramping LED, conventional LED, and temperature cycling LED, respectively.

頁(從 - 到)1806-1808
期刊IEEE Photonics Technology Letters
出版狀態Published - 2005 9月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程


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