Nitride-based LEDs with oblique sidewalls and a light guiding structure

D. S. Kuo, Shoou-Jinn Chang, C. F. Shen, T. C. Ko, T. K. Ko, S. J. Hon

研究成果: Article

6 引文 (Scopus)

摘要

The authors propose a simple method to further improve light extraction efficiency of GaN-based phosphoric acid etched light-emitting diodes (LED) by forming a light guiding structure on a sapphire substrate. Compared with conventional LEDs, it was found that the output intensity of the phosphoric acid etched LEDs with a light guiding structure was 40% higher. It was also found that the light guiding structure can effectively enhance LED output intensity in the vertical directions.

原文English
文章編號055010
期刊Semiconductor Science and Technology
25
發行號5
DOIs
出版狀態Published - 2010 四月 28

指紋

Nitrides
nitrides
Light emitting diodes
light emitting diodes
phosphoric acid
Phosphoric acid
Aluminum Oxide
output
Sapphire
sapphire
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

Kuo, D. S. ; Chang, Shoou-Jinn ; Shen, C. F. ; Ko, T. C. ; Ko, T. K. ; Hon, S. J. / Nitride-based LEDs with oblique sidewalls and a light guiding structure. 於: Semiconductor Science and Technology. 2010 ; 卷 25, 編號 5.
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Nitride-based LEDs with oblique sidewalls and a light guiding structure. / Kuo, D. S.; Chang, Shoou-Jinn; Shen, C. F.; Ko, T. C.; Ko, T. K.; Hon, S. J.

於: Semiconductor Science and Technology, 卷 25, 編號 5, 055010, 28.04.2010.

研究成果: Article

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AU - Hon, S. J.

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