Nitride-based LEDs with oblique sidewalls and a light guiding structure

D. S. Kuo; S. J. Chang; C. F. Shen; T. C. Ko; T. K. Ko; S. J. Hon

doi:10.1088/0268-1242/25/5/055010

Nitride-based LEDs with oblique sidewalls and a light guiding structure

D. S. Kuo, S. J. Chang, C. F. Shen, T. C. Ko, T. K. Ko, S. J. Hon

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

The authors propose a simple method to further improve light extraction efficiency of GaN-based phosphoric acid etched light-emitting diodes (LED) by forming a light guiding structure on a sapphire substrate. Compared with conventional LEDs, it was found that the output intensity of the phosphoric acid etched LEDs with a light guiding structure was 40% higher. It was also found that the light guiding structure can effectively enhance LED output intensity in the vertical directions.

原文	English
文章編號	055010
期刊	Semiconductor Science and Technology
卷	25
發行號	5
DOIs	https://doi.org/10.1088/0268-1242/25/5/055010
出版狀態	Published - 2010

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1088/0268-1242/25/5/055010

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AU - Ko, T. K.

AU - Hon, S. J.

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Nitride-based LEDs with oblique sidewalls and a light guiding structure

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