Nitride-Based LEDs with p-InGaN Capping Layer

S. J. Chang; C. H. Chen; P. C. Chang; Y. K. Su; P. C. Chen; Y. D. Jhou; H. Hung; S. M. Wang; B. R. Huang

doi:10.1109/TED.2003.820131

Nitride-Based LEDs with p-InGaN Capping Layer

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, B. R. Huang

微電子工程研究所

研究成果: Article › 同行評審

56 引文斯高帕斯（Scopus）

摘要

Nitride-based light-emitting diodes (LEDs) with Mg-doped In _0.23Ga_0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In_0.23Ga_0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In _0.23Ga_0.77N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In_0.23Ga_0.77N capping layer was much larger, particularly at elevated temperatures.

原文	English
頁（從 - 到）	2567-2570
頁數	4
期刊	IEEE Transactions on Electron Devices
卷	50
發行號	12
DOIs	https://doi.org/10.1109/TED.2003.820131
出版狀態	Published - 2003 12月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/TED.2003.820131

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@article{e5fb9ea2c34b477f810c2a09391bb759,

title = "Nitride-Based LEDs with p-InGaN Capping Layer",

abstract = "Nitride-based light-emitting diodes (LEDs) with Mg-doped In 0.23Ga0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In0.23Ga0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In 0.23Ga0.77N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In0.23Ga0.77N capping layer was much larger, particularly at elevated temperatures.",

author = "Chang, {S. J.} and Chen, {C. H.} and Chang, {P. C.} and Su, {Y. K.} and Chen, {P. C.} and Jhou, {Y. D.} and H. Hung and Wang, {S. M.} and Huang, {B. R.}",

year = "2003",

month = dec,

doi = "10.1109/TED.2003.820131",

language = "English",

volume = "50",

pages = "2567--2570",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Nitride-Based LEDs with p-InGaN Capping Layer

AU - Chang, S. J.

AU - Chen, C. H.

AU - Chang, P. C.

AU - Su, Y. K.

AU - Chen, P. C.

AU - Jhou, Y. D.

AU - Hung, H.

AU - Wang, S. M.

AU - Huang, B. R.

PY - 2003/12

Y1 - 2003/12

N2 - Nitride-based light-emitting diodes (LEDs) with Mg-doped In 0.23Ga0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In0.23Ga0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In 0.23Ga0.77N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In0.23Ga0.77N capping layer was much larger, particularly at elevated temperatures.

AB - Nitride-based light-emitting diodes (LEDs) with Mg-doped In 0.23Ga0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In0.23Ga0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In 0.23Ga0.77N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In0.23Ga0.77N capping layer was much larger, particularly at elevated temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0347968279&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347968279&partnerID=8YFLogxK

U2 - 10.1109/TED.2003.820131

DO - 10.1109/TED.2003.820131

M3 - Article

AN - SCOPUS:0347968279

SN - 0018-9383

VL - 50

SP - 2567

EP - 2570

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Nitride-Based LEDs with p-InGaN Capping Layer

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