@article{fb65747724db4e02ade462239d6441c3,
title = "Nitride-based LEDs with phosphoric acid etched undercut sidewalls",
abstract = "We propose a simple defect-selective wet etching method to form oblique sidewalls for GaN-based epitaxial layers with phosphoric acid. Using the same defect-selective wet etching, we also prepared GaN-based light-emitting diodes (LEDs) with undercut sidewalls. Compared with conventional LEDs with vertical sidewalls, it was found that output intensity of the LEDs prepared by defect-selective wet etching was 30% higher.",
author = "Kuo, {D. S.} and Chang, {Shoou Jinn} and Ko, {T. K.} and Shen, {C. F.} and Hon, {S. J.} and Hung, {S. C.}",
note = "Funding Information: Manuscript received November 20, 2008; revised January 11, 2009. First published February 03, 2009; current version published March 25, 2009. This work was supported by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (Grant D97-2700). This work was also supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.",
year = "2009",
month = apr,
day = "15",
doi = "10.1109/LPT.2009.2014078",
language = "English",
volume = "21",
pages = "510--512",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}