Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers

L. W. Ji, Y. K. Su, S. J. Chang, S. C. Hung, C. S. Chang, L. W. Wu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

InGaN/GaN blue light-emitting diodes (LEDs) with self-assembled quantum dot (SAQD) active layers were successfully fabricated using an interrupted growth method in metal-organic chemical vapour deposition (MOCVD). Nanoscale QDs have been formed successfully embedded in quantum wells (QWs) with a typical 3 nm height and 10nm lateral dimension. A huge 68.4 meV blue shift in electroluminescence (EL) peak position was found as the injection current was increased from 3 to 50 mA for the SAQD LED. The large EL blue shift reveals that deep localisation of exitons (or carriers) originating from QDs strengthens the band-filling effect as the injection current increases.

原文English
頁(從 - 到)486-488
頁數3
期刊IEE Proceedings: Circuits, Devices and Systems
151
發行號5
DOIs
出版狀態Published - 2004 10月

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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