Nitride-based light-emitting diodes with p-AIInGaN surface layers

C. H. Kuo, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai, P. T. Wang

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

原文English
頁(從 - 到)2346-2349
頁數4
期刊IEEE Transactions on Electron Devices
52
發行號10
DOIs
出版狀態Published - 2005 十月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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