Nitride-based light-emitting diodes with p-AIInGaN surface layers

C. H. Kuo; C. C. Lin; S. J. Chang; Y. P. Hsu; J. M. Tsai; W. C. Lai; P. T. Wang

doi:10.1109/TED.2005.856817

Nitride-based light-emitting diodes with p-AIInGaN surface layers

C. H. Kuo
, C. C. Lin
, S. J. Chang
, Y. P. Hsu
, J. M. Tsai
, W. C. Lai
, P. T. Wang

研究成果: Article › 同行評審

31 引文斯高帕斯（Scopus）

摘要

We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

原文	English
頁（從 - 到）	2346-2349
頁數	4
期刊	IEEE Transactions on Electron Devices
卷	52
發行號	10
DOIs	https://doi.org/10.1109/TED.2005.856817
出版狀態	Published - 2005 10月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/TED.2005.856817

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@article{342749f13a894a9a934bc11f078adc46,

title = "Nitride-based light-emitting diodes with p-AIInGaN surface layers",

abstract = "We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54\% by using p-AlInGaN surface layer.",

author = "Kuo, \{C. H.\} and Lin, \{C. C.\} and Chang, \{S. J.\} and Hsu, \{Y. P.\} and Tsai, \{J. M.\} and Lai, \{W. C.\} and Wang, \{P. T.\}",

year = "2005",

month = oct,

doi = "10.1109/TED.2005.856817",

language = "English",

volume = "52",

pages = "2346--2349",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Nitride-based light-emitting diodes with p-AIInGaN surface layers

AU - Kuo, C. H.

AU - Lin, C. C.

AU - Chang, S. J.

AU - Hsu, Y. P.

AU - Tsai, J. M.

AU - Lai, W. C.

AU - Wang, P. T.

PY - 2005/10

Y1 - 2005/10

N2 - We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

AB - We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

UR - https://www.scopus.com/pages/publications/33749521070

UR - https://www.scopus.com/pages/publications/33749521070#tab=citedBy

U2 - 10.1109/TED.2005.856817

DO - 10.1109/TED.2005.856817

M3 - Article

AN - SCOPUS:33749521070

SN - 0018-9383

VL - 52

SP - 2346

EP - 2349

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Nitride-based light-emitting diodes with p-AIInGaN surface layers

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