Nitride-based MIS-like photodiodes with semiinsulating Mg-doped GaN cap layers

S. J. Chang, C. L. Yu, R. W. Chuang, P. C. Chang, Y. C. Lin, Y. W. Jhan, C. H. Chen

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

Nitride-based metal-insulator-semiconductor (MlS)-like photodiodes (PDs) with in situ grown 30-nm-thick unactivated semiinsulating Mg-doped GaN cap layers were fabricated. The authors found that the reverse leakage current of the aforementioned PD was comparably much smaller than that of conventional PD without the semiinsulating layer due to the facts that inserting a semiinsulating layer would result in a thicker and higher potential barrier, and also less amounts of interface states introduced. To sum up, it was determined that the benefits of incorporating a semiinsulating Mg-doped cap layer into the PD would encompass a larger photocurrent-to-dark-current contrast ratio and larger ultraviolet-to-visible rejection ratio.

原文English
文章編號1703457
頁(從 - 到)1043-1044
頁數2
期刊IEEE Sensors Journal
6
發行號5
DOIs
出版狀態Published - 2006 十月

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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