Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communication

J. W. Shi, H. Y. Huang, J. K. Sheu, S. H. Hsieh, Y. S. Wu, Ja Yu Lu, F. H. Huang, W. C. Lai

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

We demonstrate a GaN-based waveguide photodiode at a wavelength of around 510 nm for plastic optical fiber communication. Compared with the performance of an Si-based photodiode in the same wavelength regime, our device can achieve better external efficiency. It also enjoys the unique advantage of monolithic integration with the GaN-based green-amber light-emitting-diode (LED). Our demonstrated photodiode exhibits high external efficiency (73%) and a 600-MHz electrical bandwidth. Under forward bias, this device can also serve as a transmitter (LED), and the measured optical center wavelength is around 515 nm with a 70-MHz electrical bandwidth.

原文English
頁(從 - 到)283-285
頁數3
期刊IEEE Photonics Technology Letters
18
發行號1
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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