Nitride-based QD LEDs

Shoou-Jinn Chang, Y. K. Su, L. W. Ji, C. S. Chang, L. W. Wu, Wei-Chi Lai, T. H. Fang, K. T. Lam

研究成果: Conference contribution

摘要

InGaN/GaN blue light-emitting diodes (LEDs) with multiple-quantum-dot (MQD) active layers were fabricated by using an interrupted growth method, as shown in fig. 1. As shown in fig. 2, we have formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. As shown in fig 3, 4 and 5, it was found that a large 68.4 meV blue shift in electroluminescence (EL) peak position occurred as the injection current increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs strengthens the band-filling effect as the injection current increases.

原文English
主出版物標題2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面81-82
頁數2
ISBN(電子)0780381394, 9780780381391
DOIs
出版狀態Published - 2003 一月 1
事件International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
持續時間: 2003 十二月 102003 十二月 12

出版系列

名字2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2003
國家United States
城市Washington
期間03-12-1003-12-12

指紋

Electroluminescence
Nitrides
Semiconductor quantum dots
Light emitting diodes
Semiconductor quantum wells

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Chang, S-J., Su, Y. K., Ji, L. W., Chang, C. S., Wu, L. W., Lai, W-C., ... Lam, K. T. (2003). Nitride-based QD LEDs. 於 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (頁 81-82). [1272006] (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272006
Chang, Shoou-Jinn ; Su, Y. K. ; Ji, L. W. ; Chang, C. S. ; Wu, L. W. ; Lai, Wei-Chi ; Fang, T. H. ; Lam, K. T. / Nitride-based QD LEDs. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. 頁 81-82 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).
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title = "Nitride-based QD LEDs",
abstract = "InGaN/GaN blue light-emitting diodes (LEDs) with multiple-quantum-dot (MQD) active layers were fabricated by using an interrupted growth method, as shown in fig. 1. As shown in fig. 2, we have formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. As shown in fig 3, 4 and 5, it was found that a large 68.4 meV blue shift in electroluminescence (EL) peak position occurred as the injection current increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs strengthens the band-filling effect as the injection current increases.",
author = "Shoou-Jinn Chang and Su, {Y. K.} and Ji, {L. W.} and Chang, {C. S.} and Wu, {L. W.} and Wei-Chi Lai and Fang, {T. H.} and Lam, {K. T.}",
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Chang, S-J, Su, YK, Ji, LW, Chang, CS, Wu, LW, Lai, W-C, Fang, TH & Lam, KT 2003, Nitride-based QD LEDs. 於 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1272006, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 81-82, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 03-12-10. https://doi.org/10.1109/ISDRS.2003.1272006

Nitride-based QD LEDs. / Chang, Shoou-Jinn; Su, Y. K.; Ji, L. W.; Chang, C. S.; Wu, L. W.; Lai, Wei-Chi; Fang, T. H.; Lam, K. T.

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 81-82 1272006 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

研究成果: Conference contribution

TY - GEN

T1 - Nitride-based QD LEDs

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Ji, L. W.

AU - Chang, C. S.

AU - Wu, L. W.

AU - Lai, Wei-Chi

AU - Fang, T. H.

AU - Lam, K. T.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - InGaN/GaN blue light-emitting diodes (LEDs) with multiple-quantum-dot (MQD) active layers were fabricated by using an interrupted growth method, as shown in fig. 1. As shown in fig. 2, we have formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. As shown in fig 3, 4 and 5, it was found that a large 68.4 meV blue shift in electroluminescence (EL) peak position occurred as the injection current increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs strengthens the band-filling effect as the injection current increases.

AB - InGaN/GaN blue light-emitting diodes (LEDs) with multiple-quantum-dot (MQD) active layers were fabricated by using an interrupted growth method, as shown in fig. 1. As shown in fig. 2, we have formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. As shown in fig 3, 4 and 5, it was found that a large 68.4 meV blue shift in electroluminescence (EL) peak position occurred as the injection current increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs strengthens the band-filling effect as the injection current increases.

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Chang S-J, Su YK, Ji LW, Chang CS, Wu LW, Lai W-C 等. Nitride-based QD LEDs. 於 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 81-82. 1272006. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). https://doi.org/10.1109/ISDRS.2003.1272006