Nitride-based QD LEDs

S. J. Chang, Y. K. Su, L. W. Ji, C. S. Chang, L. W. Wu, W. C. Lai, T. H. Fang, K. T. Lam

研究成果: Conference contribution

摘要

InGaN/GaN blue light-emitting diodes (LEDs) with multiple-quantum-dot (MQD) active layers were fabricated by using an interrupted growth method, as shown in fig. 1. As shown in fig. 2, we have formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. As shown in fig 3, 4 and 5, it was found that a large 68.4 meV blue shift in electroluminescence (EL) peak position occurred as the injection current increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs strengthens the band-filling effect as the injection current increases.

原文English
主出版物標題2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面81-82
頁數2
ISBN(電子)0780381394, 9780780381391
DOIs
出版狀態Published - 2003
事件International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
持續時間: 2003 十二月 102003 十二月 12

出版系列

名字2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2003
國家/地區United States
城市Washington
期間03-12-1003-12-12

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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