Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and IrPt contact electrodes

Nitride-based ultraviolet (UV) metal-semiconductor-metal photodetectors (PDs) with low-temperature (LT) GaN cap layers and IrPt contact electrodes have been fabricated. It was found that both IrPt contact electrodes and LT GaN cap layers could effectively suppress the dark current of the PDs. We also achieved larger photocurrent to dark current contrast ratio and larger UV to visible rejection ratio from the PDs with LT GaN cap layers and IrPt contact electrodes.