Noise characteristics of high-performance InGaAs PIN photodiodes prepared by MOCVD

Yung Sheng Wang, Shoou Jinn Chang, Yu Zung Chiou, Wei Lin

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

We report the growth of InGaAs-based epitaxial layers by metallorganic chemical vapor deposition (MOCVD) and the fabrication of 60 μm diameter InGaAs PIN photodiode. With -5 V applied bias, it was found that reverse leakage current and capacitance of the photodiode were only 105 pA and 0.475 pF, respectively. It was also found that measured 3 dB bandwidth for the packaged photodiode was 3.83 GHz when biased at -5 V. For a given bandwidth of 1 kHz and a given bias of -5 V, it was found that the noise-equivalent-powers of our InGaAs PIN photodiodes were 4.53× 10-14 W at 1.31 μm and 2.95× 10-14 W at 1.55 μm, which correspond to normalize detectivity values of 3.69× 1012 cm Hz0.5 W-1 at 1.31 μm and 5.67× 1012 cm Hz0.5 W-1 at 1.55 μm.

原文English
頁(從 - 到)J307-J309
期刊Journal of the Electrochemical Society
155
發行號11
DOIs
出版狀態Published - 2008

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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