摘要
ZnO nanowalls are rapidly grown on a glass substrate using a low-temperature thermal evaporation method, without the use of a catalyst and the pre-deposition of a ZnO seed layer on the substrate. Most of the ZnO nanowalls are grown vertically and are about 70-200-nm thick and 2-μm long. The room-temperature photoluminescence spectra show a strong intrinsic ultraviolet (UV) emission and a weak defectrelated orange emission. The ZnO nanowall UV sensor is highly sensitive to UV light, with an excellent UV-to-visible ratio and good flicker noise characteristics. This shows the strong potential of ZnO nanowalls for use in UV sensors. At an applied bias of 2 V, the noise equivalent power and the normalized detectivity of the ZnO nanowall UV sensor are 1.87 × 10-10 W and 3.38 × 10 9 cm·Hz0.5·W-1, respectively..
原文 | English |
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文章編號 | 6384664 |
頁(從 - 到) | 213-216 |
頁數 | 4 |
期刊 | IEEE Photonics Technology Letters |
卷 | 25 |
發行號 | 3 |
DOIs | |
出版狀態 | Published - 2013 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 原子與分子物理與光學
- 電氣與電子工程