摘要
We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs in the presence of high electric field and perpendicular magnetic field.
原文 | English |
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文章編號 | 165201 |
期刊 | Nanotechnology |
卷 | 24 |
發行號 | 16 |
DOIs | |
出版狀態 | Published - 2013 4月 26 |
All Science Journal Classification (ASJC) codes
- 生物工程
- 一般化學
- 一般材料科學
- 材料力學
- 機械工業
- 電氣與電子工程