Non-ohmic behavior of carrier transport in highly disordered graphene

Shun Tsung Lo, Chiashain Chuang, R. K. Puddy, T. M. Chen, C. G. Smith, C. T. Liang

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs in the presence of high electric field and perpendicular magnetic field.

原文English
文章編號165201
期刊Nanotechnology
24
發行號16
DOIs
出版狀態Published - 2013 4月 26

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 一般化學
  • 一般材料科學
  • 材料力學
  • 機械工業
  • 電氣與電子工程

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