Nonvolatile resistive switching memory utilizing cobalt embedded in gelatin

Cheng Jung Lee, Yu Chi Chang, Li Wen Wang, Yeong Her Wang

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG)/ indium tin oxide (ITO) resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray analyzer and X-ray photoelectron spectroscopy observations. With an appropriate Co. concentration, Co. ions can assist the formation of an interfacial AlOx layer and improve the memory properties. High ON/OFF ratio, good retention capability, and good endurance switching cycles are demonstrated with 1 M Co. concentration, in contrast to 0.5 M and 2 M memory devices. This result can be attributed to the suitable thickness of the interfacial AlOx layer, which acts as an oxygen reservoir and stores and releases oxygen during switching. The Co. element in a solution-processed gelatin matrix has high potential for bio-electronic applications.

原文English
文章編號32
期刊Materials
11
發行號1
DOIs
出版狀態Published - 2017 12月 26

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)

指紋

深入研究「Nonvolatile resistive switching memory utilizing cobalt embedded in gelatin」主題。共同形成了獨特的指紋。

引用此