Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate

S. Tong, J. L. Liu, J. Wan, Kang L. Wang

研究成果: Article同行評審

85 引文 斯高帕斯(Scopus)

摘要

Coherent Ge quantum dots embedded in Si spacing layers were grown on Si substrate by molecular-beam epitaxy in the Stranski-Krastanov mode. Photoluminescence measurement showed a Ge-dot-related peak at 1.46 μm. p-i-n photodiodes with the intrinsic layer containing Ge dots were fabricated, and current-voltage (I-V) measurement showed a low dark current density of 3×10-5A/cm2 at -1 V. A strong photoresponse at 1.3-1.52 μm originating from Ge dots was observed, and at normal incidence, an external quantum efficiency of 8% was achieved at -2.5 V.

原文English
頁(從 - 到)1189-1191
頁數3
期刊Applied Physics Letters
80
發行號7
DOIs
出版狀態Published - 2002 二月 18

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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