Normal incidence intersubband photoresponse from phosphorus δ -doped Ge dots

S. Tong, Hyung Jun Kim, Kang L. Wang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Normal incidence mid- and far-infrared photodetectors based on phosphorus δ -doped Ge dots were achieved on Si (100) substrates. Ge dots embedded in Si spacer layers were grown by molecular-beam epitaxy in the Stranski-Krastanov mode. The heavily doped (5× 1019 cm-3) Ge dot in the intrinsic Si matrix forms self-consistent potential wells in the conduction band for the ionized electrons. Photoresponse was demonstrated for an n-i-n structure in both the mid- and far-infrared wavelength ranges. The nonvanishing normal incidence response was due to the presence of nonzero off-diagonal terms for the electron mass tensor in Ge.

原文English
文章編號081104
期刊Applied Physics Letters
87
發行號8
DOIs
出版狀態Published - 2005 八月 22

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

指紋

深入研究「Normal incidence intersubband photoresponse from phosphorus δ -doped Ge dots」主題。共同形成了獨特的指紋。

引用此