Normal-incidence strained-layer superlattice Ge0.5Si 0.5/Si photodiodes near 1.3 μm

F. Y. Huang, X. Zhu, M. O. Tanner, K. L. Wang

研究成果: Article同行評審

73 引文 斯高帕斯(Scopus)

摘要

Ge0.5Si0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17% at 0.85 μm and 1% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated.

原文English
頁(從 - 到)566
頁數1
期刊Applied Physics Letters
67
DOIs
出版狀態Published - 1995

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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