Normal-incidence strained-layer superlattice Ge0.5Si 0.5/Si photodiodes near 1.3 μm

F. Y. Huang; X. Zhu; M. O. Tanner; K. L. Wang

doi:10.1063/1.115171

Normal-incidence strained-layer superlattice Ge_0.5Si _0.5/Si photodiodes near 1.3 μm

F. Y. Huang
, X. Zhu
, M. O. Tanner
, K. L. Wang

電機資訊學院

研究成果: Article › 同行評審

76 引文斯高帕斯（Scopus）

摘要

Ge_0.5Si_0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17% at 0.85 μm and 1% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated.

原文	English
頁（從 - 到）	566
頁數	1
期刊	Applied Physics Letters
卷	67
DOIs	https://doi.org/10.1063/1.115171
出版狀態	Published - 1995

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.115171

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Link to publication in Scopus

引用此

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abstract = "Ge0.5Si0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17\% at 0.85 μm and 1\% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated.",

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journal = "Applied Physics Letters",

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AU - Huang, F. Y.

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AU - Tanner, M. O.

AU - Wang, K. L.

PY - 1995

Y1 - 1995

N2 - Ge0.5Si0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17% at 0.85 μm and 1% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated.

AB - Ge0.5Si0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17% at 0.85 μm and 1% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated.

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JF - Applied Physics Letters

ER -

Normal-incidence strained-layer superlattice Ge0.5Si 0.5/Si photodiodes near 1.3 μm

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此

Normal-incidence strained-layer superlattice Ge_0.5Si _0.5/Si photodiodes near 1.3 μm