Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment

Ching Sung Lee, Han Yi Liu, Wei Chou Hsu, Si Fu Chen

研究成果: Article

4 引文 (Scopus)

摘要

The letter reports normally-off device characteristics of Al0.26Ga0.74N/AlN/GaN oxide-passivated high electron mobility transistors (HEMTs) and metal-oxide-semiconductor HEMTs (MOS-HEMTs) grown on a Si substrate. Al2O3 was formed as the surface passivation oxide or gate dielectric on a thin AlGaN barrier layer by using a cost-effective ozone water oxidization technique. CF4 plasma was used to enable normally-off operation. For the gate dimensions of 1×100 µm2, the present oxide-passivated HEMT and MOS-HEMT (a control Schottky-gate HEMT) have demonstrated superior on/off-current ratio (Ion/Ioff) of 2.5×106 and 1×107 (3.9×103), maximum extrinsic transconductance (gm, max) of 154 and 175 (120) mS/mm, maximum drain-source current density (IDS, max) of 312 and 349 (300) mA/mm, two-terminal gate-drain breakdown voltage (BVGD) of −80 and −140 (−36) V, turn-on voltage (Von) of 1.2 and 1.3 (1) V, and three-terminal on-state breakdown voltage (BVDS) of 93 and 109 (48) V. Excellent BVGD and BVDS enhancements of 122% (288%) and 94% (127%) are achieved in the present oxide-passivated HEMT (MOS-HEMT) design.

原文English
頁(從 - 到)1-4
頁數4
期刊Materials Science in Semiconductor Processing
59
DOIs
出版狀態Published - 2017 三月 1

指紋

Ozone water treatment
water treatment
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
Oxides
ozone
Metals
Plasmas
oxides
Electric breakdown
electrical faults
Gates (transistor)
Ozone
Gate dielectrics
Transconductance
transconductance
barrier layers
aluminum gallium nitride
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此文

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title = "Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment",
abstract = "The letter reports normally-off device characteristics of Al0.26Ga0.74N/AlN/GaN oxide-passivated high electron mobility transistors (HEMTs) and metal-oxide-semiconductor HEMTs (MOS-HEMTs) grown on a Si substrate. Al2O3 was formed as the surface passivation oxide or gate dielectric on a thin AlGaN barrier layer by using a cost-effective ozone water oxidization technique. CF4 plasma was used to enable normally-off operation. For the gate dimensions of 1×100 µm2, the present oxide-passivated HEMT and MOS-HEMT (a control Schottky-gate HEMT) have demonstrated superior on/off-current ratio (Ion/Ioff) of 2.5×106 and 1×107 (3.9×103), maximum extrinsic transconductance (gm, max) of 154 and 175 (120) mS/mm, maximum drain-source current density (IDS, max) of 312 and 349 (300) mA/mm, two-terminal gate-drain breakdown voltage (BVGD) of −80 and −140 (−36) V, turn-on voltage (Von) of 1.2 and 1.3 (1) V, and three-terminal on-state breakdown voltage (BVDS) of 93 and 109 (48) V. Excellent BVGD and BVDS enhancements of 122{\%} (288{\%}) and 94{\%} (127{\%}) are achieved in the present oxide-passivated HEMT (MOS-HEMT) design.",
author = "Lee, {Ching Sung} and Liu, {Han Yi} and Hsu, {Wei Chou} and Chen, {Si Fu}",
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T1 - Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment

AU - Lee, Ching Sung

AU - Liu, Han Yi

AU - Hsu, Wei Chou

AU - Chen, Si Fu

PY - 2017/3/1

Y1 - 2017/3/1

N2 - The letter reports normally-off device characteristics of Al0.26Ga0.74N/AlN/GaN oxide-passivated high electron mobility transistors (HEMTs) and metal-oxide-semiconductor HEMTs (MOS-HEMTs) grown on a Si substrate. Al2O3 was formed as the surface passivation oxide or gate dielectric on a thin AlGaN barrier layer by using a cost-effective ozone water oxidization technique. CF4 plasma was used to enable normally-off operation. For the gate dimensions of 1×100 µm2, the present oxide-passivated HEMT and MOS-HEMT (a control Schottky-gate HEMT) have demonstrated superior on/off-current ratio (Ion/Ioff) of 2.5×106 and 1×107 (3.9×103), maximum extrinsic transconductance (gm, max) of 154 and 175 (120) mS/mm, maximum drain-source current density (IDS, max) of 312 and 349 (300) mA/mm, two-terminal gate-drain breakdown voltage (BVGD) of −80 and −140 (−36) V, turn-on voltage (Von) of 1.2 and 1.3 (1) V, and three-terminal on-state breakdown voltage (BVDS) of 93 and 109 (48) V. Excellent BVGD and BVDS enhancements of 122% (288%) and 94% (127%) are achieved in the present oxide-passivated HEMT (MOS-HEMT) design.

AB - The letter reports normally-off device characteristics of Al0.26Ga0.74N/AlN/GaN oxide-passivated high electron mobility transistors (HEMTs) and metal-oxide-semiconductor HEMTs (MOS-HEMTs) grown on a Si substrate. Al2O3 was formed as the surface passivation oxide or gate dielectric on a thin AlGaN barrier layer by using a cost-effective ozone water oxidization technique. CF4 plasma was used to enable normally-off operation. For the gate dimensions of 1×100 µm2, the present oxide-passivated HEMT and MOS-HEMT (a control Schottky-gate HEMT) have demonstrated superior on/off-current ratio (Ion/Ioff) of 2.5×106 and 1×107 (3.9×103), maximum extrinsic transconductance (gm, max) of 154 and 175 (120) mS/mm, maximum drain-source current density (IDS, max) of 312 and 349 (300) mA/mm, two-terminal gate-drain breakdown voltage (BVGD) of −80 and −140 (−36) V, turn-on voltage (Von) of 1.2 and 1.3 (1) V, and three-terminal on-state breakdown voltage (BVDS) of 93 and 109 (48) V. Excellent BVGD and BVDS enhancements of 122% (288%) and 94% (127%) are achieved in the present oxide-passivated HEMT (MOS-HEMT) design.

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U2 - 10.1016/j.mssp.2016.11.037

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JO - Materials Science in Semiconductor Processing

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